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The compositional and optical characterizations of InGaAsN alloy semiconductor grown by MOVPE

Published online by Cambridge University Press:  11 February 2011

Sakuntam Sanorpim ,
Fumihiro Nakajima ,
Ryuji Katayama ,
Kentaro Onabe  and
Yashihiro Shiraki
Sakuntam Sanorpim
Affiliation:
Department of Applied Physics, Graduate Schools of Engineering
Fumihiro Nakajima
Affiliation:
Department of Advanced Materials Science, Graduate Schools of Frontier Sciences, The University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113–8656, JAPAN.
Ryuji Katayama
Affiliation:
Department of Advanced Materials Science, Graduate Schools of Frontier Sciences, The University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113–8656, JAPAN.
Kentaro Onabe
Affiliation:
Department of Applied Physics, Graduate Schools of Engineering Department of Advanced Materials Science, Graduate Schools of Frontier Sciences, The University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113–8656, JAPAN.
Yashihiro Shiraki
Affiliation:
Department of Applied Physics, Graduate Schools of Engineering
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Abstract

We report on the compositional and optical investigation of InGaAs(N) alloy films grown on GaAs (001) substrates by low-pressure (60 Torr) metalorganic vapor phase epitaxy (MOVPE). The alloy films with the room-temperature photoreflactance (PR) signal (Eo transition) wavelength range of 0.98–1.36 m have been grown. The variation in PL characteristics of the InGaAs(N) alloy films has been investigated as a function of alloy composition, excitation power and temperature. At low temperatures (T<100K), the PL spectra with several sub-peaks include localization emission as well as near-band-edge emission. On the other hand, the room-temperature PL properties for InxGa1-xAs1-yNy (x = 10.5% and 17.0% and y < 2%) are excellent with a single near-band-edge emission peak corresponding to their own Eo transition. The evolution of PL spectra with excitation power and temperature led to an insight into the nature of the near-band-edge states. The temperature dependence of integrated PL intensity indicates the presence of a large density of non-radiative recombination centers, showing a behavior characterized by two activation energies. Our results suggest that the origin of localization in InGaAsN alloy films is the alloy inhomogeneities of both In and N, which may results in the characteristic carrier dynamics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M10.9
Copyright
Copyright © Materials Research Society 2003

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References

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