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Composition and Structure of Vicinal Ge(100) Surfaces Exposed to Tertiarybutylarsine

Published online by Cambridge University Press:  10 February 2011

Shupan Gan ,
Lian Li ,
Byung-Kwon Han  and
Robert F. Hicks
Shupan Gan
Affiliation:
Chemical Engineering Department, 5531 Boelter Hall, University of California, Los Angeles, CA 90095-1592, [email protected]
Lian Li
Affiliation:
Chemical Engineering Department, 5531 Boelter Hall, University of California, Los Angeles, CA 90095-1592, [email protected]
Byung-Kwon Han
Affiliation:
Chemical Engineering Department, 5531 Boelter Hall, University of California, Los Angeles, CA 90095-1592, [email protected]
Robert F. Hicks
Affiliation:
Chemical Engineering Department, 5531 Boelter Hall, University of California, Los Angeles, CA 90095-1592, [email protected]
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Abstract

Germanium (100) substrates, 9° off axis towards the [011] direction, were heated in 2.0 Torr tertiarybutylarsine and 97.0 Torr hydrogen for 30 min at 650°C, then transferred to an ultrahigh vacuum system and annealed at several temperatures between 400 and 700°C. The arsenic coverage remained constant at 1.0 monolayer during heating in vacuum to 400°C. Further heating to 700°C caused the As coverage to gradually fall to zero. A mixed domain (l×2)+(2×l) dimer-terminated surface was observed by scanning tunneling microscopy after annealing at 400 to 510°C. Between 510 and 580°C, a single domain (l×2) reconstruction was recorded that contained equally spaced terraces separated by steps four atomic layers in height. Above 600°C, a (2×l) Ge(100) surface was produced that contained uniform terraces separated by steps two atomic layers in height.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 247
Copyright
Copyright © Materials Research Society 1998

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