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Composition and Structure of SiCx:H Films Formed by Plasma Immersion ION Implantation From A Methane Plasma

Published online by Cambridge University Press:  17 March 2011

K. Volz ,
Ch. Klatt  and
W. Ensinger
K. Volz
Affiliation:
Materials Science Center, Philipps-University, 35032 Marburg, Germany; [email protected]
Ch. Klatt
Affiliation:
Max-Planck Institute for Nuclear Physics, 69120 Heidelberg, Germany
W. Ensinger
Affiliation:
Materials Science Center, Philipps-University, 35032 Marburg, Germany
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Abstract

Hydrocarbon ions are implanted into silicon by pulse biasing Si to a high voltage of -45 kV in a methane plasma. The resulting SiCx:H films are examined with respect to their composition and chemical binding by RBS, NRA and IR spectroscopy. The process may yield all C/Si ratios, up to pure C films. The H depth profile is shown to be strongly governed by the C depth profile. Silicon carbide bonding as well as C–H bonds can be proven in the implanted region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A23.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Conrad, J. R., Radtke, J. L., Dodd, R. A., Worzala, F. J., and Tran, N. C., J. Appl. Phys. 62 (1987) 4591.Google Scholar
[2] Tendys, J., Donnelly, I.J., Kenny, M.J., Pollock, J.T.A., Appl. Phys. Lett. 53 (1988) 2143.Google Scholar
[3] Ensinger, W.. Volz, K., Enders, B., Surf. Coat. Technol. 120/121 (1999) 343.Google Scholar
[4] Doolittle, L.R.; Nucl. Instrum. Methods Phys. Res. B 9 (1985) 344.Google Scholar
[5] Lanford, W.A., Trautvetter, H.P., Ziegler, J.F., J. Keller; Appl. Phys. Lett. 28 (1976) 566.Google Scholar
[6] Volz, K., Baba, K., Hatada, R., and Ensinger, W.; Surf. Coat. Technol. in press.Google Scholar
[7] Bullot, J., Schmidt, M.P., Phys. stat. sol. (b) 143 (1987) 345.Google Scholar