Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-05T14:42:30.676Z Has data issue: false hasContentIssue false
  • English
  • Français

Complex Defects in Semiconductors

Published online by Cambridge University Press:  25 February 2011

B. Monemar
B. Monemar*
Affiliation:
Max-Planck-Institut für Festkörperforschung Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany
Get access

Abstract

Complex defects in semiconductors are briefly reviewed, with emphasis on the electronic structure. Classes of such defects with a varying degree of complexity are discussed, with reference to recent optical data for neutral defects in GaP and silicon. These include PGa-antisite related substitutional complexes in GaP, Gai-acceptor complexes in GaP, substitu-tional chalcogen complex defects in silicon and vacancy-impurity complexes in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 39
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 For an update on the present status of research on shallow impurities see e.g. Proc. 3rd Intl. Conf. on Shallow Impurities in Semiconductors, Linköping, Sweden, Aug. 1988, Inst. Phys. Conf. Ser. 95, 1988, ed. B. Monemar.Google Scholar
2 For a recent review on deep levels see e.g. Pantelides, S.T., Deep Centers in Semiconductors (Gordon and Breach, New York, 1986).Google Scholar
3 Monemar, B., CRC Critical Reviews on Solid State and Materials Sciences 15, 111 (1988).Google Scholar
4 Baraff, G.A. and Schlüter, M., Phys. Rev. B33, 7346 (1986).Google Scholar
5 Car, R., Kelly, P., Oshiyama, A., and Pantelides, S.T., Phys. Rev. Lett. 52, 1814 (1984).Google Scholar
6 Dabrowski, J. and Schemer, M., Phys. Rev. Lett. 60, 2183 (1988); D.J. Chadi and K.J. Chang, Phys. Rev. Lett. 60, 2187 (1988).Google Scholar
7 Monemar, B., Lindefelt, U., and Chen, W.M., Physica 146B, 256 (1987).Google Scholar
8 Cavenett, B.C., Adv. in Phys. 30, 475 (1981).Google Scholar
9 Chen, W.M., Monemar, B., and Godlewski, M., Defect and Diffusion Forum, 62/63, 133 (1989).Google Scholar
10 Khachaturyan, K., Kaminska, M., Weber, E.R., Becla, P., and Street, R.A., Phys. Rev. B40, 6304 (1989)Google Scholar
11 Dean, P.J., “Luminescence of Crystals, Molecules and Solutions”, ed Williams, F., (Plenum, New York, 1973) p. 538.Google Scholar
12 Watkins, G.D. and Corbett, J.W., Phys. Rev. 121, 1001 (1961); J.W. Corbett, G.D. Watkins, R.M. Crenko, and R.S. McDonald, Phys. Rev. 121, 1015 (1961).Google Scholar
13 Brower, K.L., Phys. Rev. Lett. 44, 1627 (1980); Phys. Rev. B26, 6040 (1982).Google Scholar
14 Watkins, G.D. and Corbett, J.W., Phys. Rev. 138, A543 (1965).Google Scholar
15 Thomas, D.G. and Hopfield, J.J., Phys. Rev. 155, 680 (1966).Google Scholar
16 Morgan, T.N., Welber, B., and Bhargava, R.N., Phys. Rev. 166, 751 (1968); C.H. Henry, P.J.Dean, and J.D. Cuthbert, ibid., 166, 754 (1968).Google Scholar
17 Ludwig, G.W. and Woodbury, H.H., Solid State Physics, Vol. 3 (Academic Press, New York, 1962) p. 223.Google Scholar
18 Sauer, R. in Microscopic Identification of Electronic Defects in Semiconductors, edited by Johnson, N.M., Bishop, S.G., and Watkins, G.D. (Materials Research Society Proc. 46, Pittsburgh, PA 1987) p. 507.Google Scholar
19 Davies, G., Physics Reports 176, 83 (1989).Google Scholar
20 Watkins, G.D., Proc. 15th Int. Conf. on Defects in Semiconductors, Budapest, Aug. 22–26, 1986, Ferenczi, G., ed., Materials Science Forum 38/41, p. 39 Google Scholar
21 Watkins, G.D., Proc. 14th Int. Conf. on Defects in Semiconductors, Paris, Aug. 18–22, 1986, von Bardeleben, H., ed., Materials Science Forum 10/11, p. 953 Google Scholar
22 Grossman, G., Bergman, K., and Kleverman, M. 146B, 30 (1987).Google Scholar
23 Kaufmann, U., Schneider, J., and Räuber, A., Appl. Phys. Lett. 29, 312 (1976).Google Scholar
24 Chen, W.M., Gislason, H.P., and Monemar, B., Phys. Rev. B36, 5058 (1987).Google Scholar
25 Chen, W.M., Monemar, B., and Godlewski, M., Phys. Rev. B37, 2564 (1988).Google Scholar
26 Godlewski, M., Chen, W.M., and Monemar, B., Defect and Diffusion Forum, 62/63, 107 (1989).Google Scholar
27 Gal, M., Cavanett, B.C., and Smith, P., Phys. Rev. Lett. 43, 1611 (1979).Google Scholar
28 Gal, M., Cavenett, B.C., and Dean, P.J., J. Phys. C14, 1507 (1981).Google Scholar
29 Godlewski, M. and Monemar, B., Phys. Rev. B37, 2752 (1988).Google Scholar
30 Gal, M., Phys. Rev. B39, 10422 (1989).Google Scholar
31 Godlewski, M. and Monemar, B., B39, 10424 (1989).Google Scholar
32 Godlewski, M., Chen, W.M., and Monemar, B., Phys. Rev. B37, 2570 (1988).Google Scholar
33 Chen, W.M. and Monemar, B., Phys. Rev. B40, 1365 (1989).Google Scholar
34 Weinert, C.M. and Schemer, M., Phys. Rev. Lett. 58, 1456 (1987).Google Scholar
35 Ludwig, G.W., Phys. Rev. 137, A 1520 (1965).Google Scholar
36 Janzèn, E., Stedman, R., Grossmann, G., and Grimmeiss, H.G., Phys. Rev. B29, 1907 (1984).Google Scholar
37 Sankey, O.F. and Dow, J.D., Phys. Rev. B26, 3243 (1982); G. Kim, J.D. Dow, and S. Lee, Phys. Rev. 1340, 7888 (1989).Google Scholar
38 Beckett, D.S., Nissen, M.K., and Thewalt, M.L.W., Phys. Rev. B40, 9618 (1989).Google Scholar
39 Singh, M., Lightowlers, E. C., and Davies, G., Proc. E-MRS 1989 Spring Meeting, May 30-June 2, Strasbourg, France, (in press).Google Scholar
40 Janzèn, E., Henry, A., Chen, W.M., and Monemar, B., (unpublished).Google Scholar
41 Chen, W.M., Henry, A., Janzèn, E., Monemar, B., and Thewalt, M.L.W., (these proceedings).Google Scholar
42 Bradfield, P.L., Brown, T.G., and Hall, D.G., Phys. Rev. B38, 3533 (1988).Google Scholar
43 Svensson, J.H. and Monemar, B., Phys. Rev. B40, 1410 (1989).Google Scholar
44 Thonke, K., Watkins, G.D., and Sauer, R., Solid State Commun. 51, 127 (1984).Google Scholar
45 Svensson, J.H. and Monemar, B., (these proceedings).Google Scholar
46 Thonke, K., Hangleiter, A., Wagner, J., and Sauer, R., J. Phys. C18, L795 (1985).Google Scholar
47 Pearton, S.J., Corbett, J.W., and Shi, T.S., Appl. Phys. A43, 153 (1987).Google Scholar
48 Chen, W.M., Awadelkarim, O.O., Monemar, B., Lindström, J.L., and Oehrlein, G.S., (unpublished).Google Scholar