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Comparisons and analyses on heterostructures consisting of ZnO and different ferroelectric films

Published online by Cambridge University Press:  13 July 2011

Nai-wen ZHANG ,
Ze JIA ,
Ming-ming ZHANG  and
Tian-ling REN
Nai-wen ZHANG
Affiliation:
Institute of Microelectronics, Tsinghua National Laboratory for Information Science and TechnologyTsinghua University, Haidian District, Beijing, 100084, China
Ze JIA*
Affiliation:
Institute of Microelectronics, Tsinghua National Laboratory for Information Science and TechnologyTsinghua University, Haidian District, Beijing, 100084, China
Ming-ming ZHANG
Affiliation:
Institute of Microelectronics, Tsinghua National Laboratory for Information Science and TechnologyTsinghua University, Haidian District, Beijing, 100084, China
Tian-ling REN
Affiliation:
Institute of Microelectronics, Tsinghua National Laboratory for Information Science and TechnologyTsinghua University, Haidian District, Beijing, 100084, China
*
*Corresponding author’s E-mail: [email protected]
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Abstract

Two different types of ferroelectric/semiconductor heterostructures, made up of Pb(Zr,Ti)O3/ZnO and BiFeO3/ZnO respectively, were fabricated on Pt(111)/Ti/SiO2/Si(100) by sol-gel process. Obvious diodelike behavior were observed in BiFeO3/ZnO heterostructures when current-voltage characteristics were measured, while Pb(Zr,Ti)O3/ZnO heterostructures exhibited a symmetrical behavior. It is found that Pb(Zr,Ti)O3/ZnO heterostructures showed a large polarization and the remnant polarization was approximately 15μC/cm2. The remnant polarization performed a modulation on the channel resistance. The different properties of two heterostructures might lead to different applications.

Keywords

ferroelectricsemiconductingsol-gel
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1368: Symposium WW – Multiferroic, Ferroelectric, and Functional Materials, Interfaces and Heterostructures , 2011 , mrss11-1368-ww11-20
Copyright
Copyright © Materials Research Society 2011

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References

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