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Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

Published online by Cambridge University Press:  03 September 2012

U. Hömmerich ,
J. T. Seo ,
J. D. MacKenzie ,
C. R. Abernathy ,
R. Birkhahn ,
A. J. Steckl  and
J. M. Zavada
U. Hömmerich
Affiliation:
Hampton University, Department of Physics, Hampton, VA 23668 E-mail: [email protected]
J. T. Seo
Affiliation:
Hampton University, Department of Physics, Hampton, VA 23668
J. D. MacKenzie
Affiliation:
University of Florida, Dept. of Materials Science and Eng., Gainesville, FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Dept. of Materials Science and Eng., Gainesville, FL 32611
R. Birkhahn
Affiliation:
University of Cincinnati, Nanoelectronics Laboratory, Cincinnati, OH 45221
A. J. Steckl
Affiliation:
University of Cincinnati, Nanoelectronics Laboratory, Cincinnati, OH 45221
J. M. Zavada
Affiliation:
U.S. Army European Research Office, London, UK, NW1 5 TH
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Abstract

We report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.65
Copyright
Copyright © Materials Research Society 1999

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References

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