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A Comparison of the Diffusivity of As and Ge in Si at high Donor Concentrations
Published online by Cambridge University Press: 25 February 2011
Abstract
The effect of high background doping (8×1019 - 5×1020 cm-3 ) on the diffusion of Ge and As in Si has been studied. A strong enhancement is found for As for donor concentrations higher than ~2×1020 cm-3 , but not for Ge. These experimental findings are discussed within the percolation model.
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- Copyright © Materials Research Society 1990
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