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Comparison of Properties of Sintered and Sintered Reaction-Bonded Silicon Nitride Fabricated by Microwave and Conventional Heating

Published online by Cambridge University Press:  15 February 2011

Terry N. Tiegs ,
James O. Kiggans Jr ,
H. T. Lin  and
Craig A. Willkens
Terry N. Tiegs
Affiliation:
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831–6087
James O. Kiggans Jr
Affiliation:
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831–6087
H. T. Lin
Affiliation:
Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831–6087
Craig A. Willkens
Affiliation:
St. Gobain/Norton Industrial Ceramics, Goddard Rd., Northboro, MA 01532–1545
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Abstract

A comparison of microwave and conventional processing of silicon nitride-based ceramics was performed to identify any differences between the two, such as improved fabrication parameters or increased mechanical properties. Two areas of thermal processing were examined: (1) sintered silicon nitride (SSN) and (2) sintered reaction-bonded silicon nitride (SRBSN). The SSN powder compacts showed improved densification and enhanced grain growth. SRBSN materials were fabricated in the microwave with a one-step process using cost-effective raw materials. The SRBSN materials had properties appropriate for structural applications. Observed increases in fracture toughness for the microwave processed SRBSN materials were attributable to enhanced elongated grain growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 347: Symposium O – Microwave Processing of Materials IV , 1994 , 501
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Katz, R. N., Nitrogen Ceramics 1976–1981, pp. 3–20 in Progress in Nitrogen Ceramics, ed. Riley, F. L., Martinus Nijhoff Pub., The Hague, Netherlands (1983).Google Scholar
2. Tiegs, T. N., Kiggans, J. O., and Kimrey, H. D., “Microwave Processing of Silicon Nitride,” pp. 267–272 in Microwave Processing of Materials-II, Vol. 189, ed. by Snyder, W.B., Sutton, W.H., Johnson, D.L., and Iskander, M.F., Materials Research Soc., Pittsburgh, PA 1991.Google Scholar
3. Tiegs, T. N. and Kiggans, J. O., and Kimrey, H. D., “Microwave Sintering of Silicon Nitride,” Ceram. Eng. Sci. Proc, 12[9–10] 1981–1992 (1991).Google Scholar
4. Kiggans, J. O. and Tiegs, T. N., “Characterization of Sintered Reaction Bonded Silicon Nitride Processed By Microwave Heating,” pp. 285–290 in Microwave Processing of Materials-III, Vol. 269, ed. by Beatty, R. L., Sutton, W.H., and Iskander, M.F. Materials Research Soc., Pittsburgh, PA 1992.Google Scholar
5. Kiggans, J. O., Hubbard, C. R., Steele, R. R., Kimrey, H. D., Holcombe, C. E., and Tiegs, T. N., “Characterization of Silicon Nitride Synthesized By Microwave Heating,” pp. 403–410 in Ceramic Transactions, Microwaves: Theory and Application in Materials Processing, ed. Clark, D.E., Gac, F.D., and Sutton, W.H., American Ceramic Society, Westerville, OH, 1988.Google Scholar
6. Tiegs, T. N., Ferber, M.K., Kiggans, J.O., More, K.L., Hubbard, C.M., and Coffey, D.W., “Microstructure Development During Microwave Annealing of Dense Silicon Nitride,” pp. 411–420 in Ceramic Transactions, Microwaves: Theory and Application in Materials Processing, ed. Clark, D.E., Gac, F.D., and Sutton, W.H., American Ceramic Society, Westerville, OH, 1988.Google Scholar
7. Tiegs, T. N. and Kiggans, J. O., “Fabrication of Silicon Nitride Ceramics by Microwave Heating,” pp. 665–671 in Proc 4th International Symp. Ceram. Mater. & Compon, for Engines, Elsevier Applied Sci., New York (1992).Google Scholar
8. Patterson, M. L. C., Ape, P. S., Kimber, R. M., and Roy, R., “Batch Process For Microwave Sintering of Silicon Nitride,” pp. 291–300 in Microwave Processing of Materials-III, Vol. 269, ed. by Beatty, R. L., Sutton, W.H., and Iskander, M.F. Materials Research Soc., Pittsburgh, PA 1992.Google Scholar
9. Patterson, M. L. C., Ape, P. S., Kimber, R. M., and Roy, R., “Mechanical and Physical Properties of Microwave Sintered Si3N4,” pp. 301–310 in Microwave Processing of Materials-III, Vol. 269, ed. by Beatty, R. L., Sutton, W.H., and Iskander, M.F., Materials Research Soc., Pittsburgh, PA 1992.Google Scholar
10. Zhang, J., Cao, L., and Xia, F., “Microwave Sintering of Si3N4,” pp. 329–334 in Microwave Processing of Materials-III, Vol. 269, ed. by Beatty, R. L., Sutton, W.H., and Iskander, M.F. Materials Research Soc., Pittsburgh, PA 1992.Google Scholar
11. Tiegs, T. N., Kiggans, J. O., and Ploetz, K. L., “Cost-Effective Sintered Reaction-Bonded Silicon Nitride for Structural Ceramics” Ceram. Eng. Sci. Proc, 14[l-2] 378–388 (1993).Google Scholar
12. Tiegs, T. N., Kiggans, J. O., and Ploetz, K. L.,, “Sintered Reaction-Bonded Silicon Nitride By Microwave Heating” pp. 283–288 in Materials Research Society Proceedings, Vol 287.Google Scholar
13. Kiggans, J. O., Tiegs, T. N., Kimrey, H. D. and Holcombe, C. E., “Processing of Complex intered Reaction Bonded Silicon Nitride Parts by Microwave Heating,” pp. 269–276 in Cramic Transactions, Microwaves: Theory and Application in Materials Processing II, Am. Ceram. Soc., Westerville, OH (1993).Google Scholar
14. Clarke, D. R. and Ho, W.W., “Effect of Intergranular Phases on the High-Frequency Dielectric Losses of Silicon Nitride Ceramics.” In Additives and Interfaces in Electronic Ceramics, Advances in Ceramics, Vol. 7, ed. Yan, M.F. and Heuer, A.H., Amer. Ceram. Soc., Westerville, OH, 1983, pp. 246–252.Google Scholar
15. Ohno, H. and Katano, Y., “Electrical Properties of Silicon Nitride.” In Mater. Sci. Forum, Vol. 47, 1989, pp. 215–227.Google Scholar