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Comparison of High-Purity-Ozone Oxidation on Si(111) and Si(100)

Published online by Cambridge University Press:  10 February 2011

A. Kurokawa ,
S. Ichimura  and
D. W. Moon
A. Kurokawa
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, Japan
S. Ichimura
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, Japan
D. W. Moon
Affiliation:
Korea Research Institute of Standards and Science, Taejon, Korea
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Abstract

The oxidation of Si(111) and Si(100) surfaces with the high-purity ozone(more than 98 mole %) was investigated with X-ray photoelectron spectroscopy (XPS). Thin oxide less than 3nm thickens was formed in an experimental chamber and the results showed that ozone oxidizes the (111) surface faster than (100) surface. Ozone does not show the temperature dependence on oxidation within the temperature range of 250–500 degree C for both (111) and (100) surfaces. Ozone proceeds the oxide formation at 700 degree C where oxygen does not proceed oxide formation rapidly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 359
Copyright
Copyright © Materials Research Society 1997

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References

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