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Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE

Published online by Cambridge University Press:  11 February 2011

John P. Leonard ,
Byungha Shin ,
James W. McCamy  and
Michael J. Aziz
John P. Leonard
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138.
Byungha Shin
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138.
James W. McCamy
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138.
Michael J. Aziz
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138.
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Abstract

Differences in the homoepitaxy of Ge(001) are explored using a dual MBE/PLD deposition system. With identical substrate preparation, temperature calibration, background pressure and analysis, the system provides a unique comparison of the processes arising only from kinetic differences in the flux and at the surface. All films show mounded growth. At substrate temperatures below 200°C, PLD films are smoother than MBE films, whereas they are similar at higher temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W16.11
Copyright
Copyright © Materials Research Society 2003

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References

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