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Comparison of Current and Light Induced Defects in a-Si:H

Published online by Cambridge University Press:  01 January 1993

R.A. Street ,
W.B. Jackson  and
M. Hack
R.A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
W.B. Jackson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
M. Hack
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

Metastable defect creation by illumination and by a forward current in p-i-n devices are compared using CPM and reverse current measurements of the defect density. The data show that the same defects are formed by the two mechanisms, but with different spatial profiles. Numerical modelling shows how the spatial profile influences the reverse bias current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 553
Copyright
Copyright © Materials Research Society 1993

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References

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