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Comparison of A-Si:H Films Prepared by RP- and Conventional P-CVD

Published online by Cambridge University Press:  21 February 2011

Sung Chul Kim ,
Kyu Chang Park ,
Sung Ki Kim ,
Tae Gon Kim ,
Jae Sung Pyun ,
Jung Mok Jun  and
Jin Jang
Sung Chul Kim
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Kyu Chang Park
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Sung Ki Kim
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Tae Gon Kim
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Jae Sung Pyun
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Jung Mok Jun
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
Jin Jang
Affiliation:
Department of Physics, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea
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Abstract

We have studied the effect of RF power on the properties of Si thin films prepared by a conventional plasma and remote plasma(RP)- CVD. The structure of the Si film changes from amorphous to crystalline with increasing RF power in RP-CVD. However, the structure of Si film deposited by P-CVD remains amorphous with increasing RF power. The relaxation of Si atoms by means of chemical annealing of He metastable atoms gives rise to the formation of macrocrystalline structure at the high RF powers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 51
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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