Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T18:03:29.804Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparison Of Aln Films Synthesized By Pulsed Laser Ablation And Magnetron Sputtering Techniques

Published online by Cambridge University Press:  10 February 2011

K. Jagannadham ,
A. K. Sharma ,
Q. Wei ,
R. Kalyanraman  and
J. Narayan
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, NC 27695.
A. K. Sharma
Affiliation:
Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, NC 27695.
Q. Wei
Affiliation:
Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, NC 27695.
R. Kalyanraman
Affiliation:
Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, NC 27695.
J. Narayan
Affiliation:
Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, NC 27695.
Get access

Abstract

A comparative study is reported on the aluminum nitride (AIN) films on Si (111) substrate deposited by pulsed laser deposition and reactive magnetron sputtering. The structure, bonding characteristics, relative impurity levels, and wear resistance have been investigated to compare these films. We have used the techniques such as high resolution transmission electron microscopy, Raman spectroscopy, fourier transform infra-red spectroscopy, secondary ion mass spectrometry, and crater grinding method for wear test, to delineate differences between these AIN films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 469
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Lambrecht, W.R.L., Mat. Res. Soc. Symp. Proc., 339, 565 (1994).Google Scholar
2.Kung, P., Saxler, A., Zhang, X., Walker, D., Wang, T.C., Furguson, I. and Razeghi, M., Appl. Phys. Lett., 66, 2958 (1995).Google Scholar
3.Stevens, K.S., Ohtani, A., Kinniburgh, M., and Beresford, R., Appl. Phys. Lett., 65, 321 (1994).Google Scholar
4.Vispute, R.D., Wu, H., and Narayan, J., Appl. Phys. Lett., 67, 1549 (1995).Google Scholar
5.Meng, W.J., Heremans, J., and Chang, Y.T., Appl. Phys. Lett., 59, 2097 (1991).Google Scholar
6.Dupendant, H., Gavigan, J.P., Givord, D., Lienard, A., Rebouillat, J.P., and Souche, Y., Appl. Surf. Sci., 43, 369 (1989).Google Scholar
7.Kassman, A., Jacobson, S., Ericson, L., Hedenqvist, P., and Olsson, M., Surf. Coat. Technol., 50, 75 (1991).Google Scholar
8.Vispute, R.D., Narayan, J., Wu, H., and Jagannadham, K., J. Appl. Phys., 77, 4724 (1995).Google Scholar
9.McNeil, L.E., Grimsditch, M., and French, R.H., J. Am. Ceram. Soc., 76, 1132 (1993).Google Scholar
10.Carlone, C., Lakin, K.M., and Shanks, H.R., J. Appl. Phys., 55, 4010 (1984).Google Scholar
11.Sanjurjo, J.A., Lopez-Cruz, E., Vogl, P., and Cardona, M., Phys. Rev. B, 28, 4579 (1983).Google Scholar
12.Sharma, A.K., Narayan, R.J., Narayan, J., and Jagannadham, K., submitted to Mat. Sci. & Engg. B (1997).Google Scholar
13.Wei, Q. et al. Submitted to Mat. Sci. & Engg. B (1997).Google Scholar