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A Comparison of AFM, SEM, and TEM Analysis of AL/SI/CU Thin Films

Published online by Cambridge University Press:  25 February 2011

K. L. Westra
Affiliation:
University of Manitoba, DepL of Electrical and Computer Engineering, Winnipeg, Manitoba, Canada, R3T 2N2
D. J. Thomson
Affiliation:
University of Manitoba, DepL of Electrical and Computer Engineering, Winnipeg, Manitoba, Canada, R3T 2N2
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Abstract

Atomic Force microscopy, scanning electron microscopy, and transmission electron microscopy was used to study Al/Si/Cu films sputter deposited at 2 and 45 mTorr. AFM and SEM analysis shows the films to consist of columnar structures commonly seen in PVD deposited thin films, while the TEM analysis showed the films be polycrystalline. Comparing the columnar structures seen in the AFM and SEM study to the grains found in the TEM study, we conclude that the columns consist of single grains. Thus for these films AFM or SEM analysis can be used to determine the grain size. Finally, an AFM scan of a Al/Si/Cu deposited via was performed. The AFM image clearly shows the high resolution of the AFM, while it also illustrates the problems caused by the finite size of the AFM tip.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Rogers, M. R., Proc. International Reliability Physics Symposium, IEEE, p 250 (1991).Google Scholar
2. Wolter, O., Bayer, Th., and Greschner, J., J. Vac. Sci. Technol. B 9, 1353 (1991).Google Scholar
3. Rugar, D. and Hansma, P., Physics Today, October 1990, p 23.CrossRefGoogle Scholar
4. Wickramasinghe, H. K., Sci. Am., October 1989, p 98.Google Scholar
5. Baerg, W. and Wu, K., Solid State Tech., March 1991, p 35.Google Scholar