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Comparison Between I/F Noise, High-Resolution Resistometric, and Lifetime Electromigration Studies of AL and AL(SI)

Published online by Cambridge University Press:  21 February 2011

J.R. Kraayeveld ,
A.H. Verbruggen  and
S. Radelaar
J.R. Kraayeveld
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Delft, The Netherlands
A.H. Verbruggen
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Delft, The Netherlands
S. Radelaar
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Delft, The Netherlands
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Abstract

To compare the results obtained by 1/f noise, high-resolution resistance and electromigration lifetime measurements, the effect of annealing at 400 °C in forming gas of Al and AI(Si) thin films has been studied. All samples of a given composition have been fabricated simultaneously. Upon annealing, the 1/f noise measured at room temperature decreases by a factor of two whereas the lifetime increases by a factor 3 to 6. The activation energies derived from the 1/f noise and the high-resolution resistance measurements during and after stressing with a DC current are closely correlated and compare well to values reported for lifetime measurements. Comparing the data of the different experiments suggest that the lifetime experiments predominantly probe the presence of weak spots in the films whereas the noise measurements respond more to local disorder.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 307
Copyright
Copyright © Materials Research Society 1993

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References

[1] Scorzoni, A., Neri, B., Caprile, C., and Fantini, F., Mat.Sci.Reports. 7,143 (1991).Google Scholar
[2] Verbruggen, A.H., Stoll, H., Heeck, K., and Koch, R.H., Appl.Phys.A 48, 233 (1989).Google Scholar
[3] Lloyd, J.R. and Koch, R.H., Appl.Phys.Lett. 52, 194 (1988).Google Scholar
[4] Koch, R.H., Lloyd, J.R., and Cronin, J., Phys.Rev.Lett. 55, 2487 (1985).Google Scholar
[5] Kraayeveld, J.R., Verbruggen, A.H. and Radelaar, S., Proc. of the 3rd Europ. Symp. on Reliab. of Electron Dev., Failure Phys. and Analysis (ESREF92), Schwäbisch Gmünd, Germany, pp. 377–378 (1992).Google Scholar
[5] Dutta, P. and Horn, P., Rev.Mod.Phys. 53, 497 (1981).Google Scholar
[7] d'Heurle, F.M. and Ho, P.S., in “Thin Films - Interdiffusion and Reactions”, ed.Poate, J.M., Tu, K.N. and Mayer, J.W., John Wiley & Sons, 243 (1978).Google Scholar
[8] Blech, I.A., J.Appl.Phys. 47, 1203 (1976).Google Scholar