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A Comparative Study of the Reflectance Difference Spectrum from Si(001) Using Reflectance Difference Spectroscopy /Low-Energy Electron Diffraction/Scanning Tunneling Microscopy

Published online by Cambridge University Press:  15 February 2011

Jia-Ling Lin ,
S. G. Jaloviar ,
L. Mantese ,
D. E. Aspnes ,
L. McCaughan  and
M. G. Lagally
Jia-Ling Lin
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
S. G. Jaloviar
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
L. Mantese
Affiliation:
North Carolina State University, Raleigh, NC 27695
D. E. Aspnes
Affiliation:
North Carolina State University, Raleigh, NC 27695
L. McCaughan
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
M. G. Lagally
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706
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Abstract

From a comparative study using scanning tunneling microscopy, high-resolution lowenergy electron diffraction, and reflectance difference spectroscopy, we investigate the optical anisotropy on clean and H-covered Si(001) surfaces. We demonstrate a high sensitivity of reflectance difference spectroscopy to the surface tructural anisotropy and surface chemistry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 401
Copyright
Copyright © Materials Research Society 1996

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References

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