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A Comparative Study of MOCVD Produced ZnO Films Doped with N, As, P and Sb

Published online by Cambridge University Press:  01 February 2011

Gary S. Tompa ,
S. Sun ,
C. E. Rice ,
L. G. Provost  and
D. Mentel
Gary S. Tompa
Affiliation:
[email protected], Structured Materials Industries, Inc., R&D, 201 Circle Drive North, Unit 102/103, Piscataway, NJ, 08854, United States, 732-302-9274, 732-302-9275
S. Sun
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive N., Unit 102/103, Piscataway, NJ, 08854, United States
C. E. Rice
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive N., Unit 102/103, Piscataway, NJ, 08854, United States
L. G. Provost
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive N., Unit 102/103, Piscataway, NJ, 08854, United States
D. Mentel
Affiliation:
[email protected], Structured Materials Industries, Inc., 201 Circle Drive N., Unit 102/103, Piscataway, NJ, 08854, United States
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Abstract

ZnO thin films are of interest for an array of applications; including: light emitters, photovoltaics, sensors and transparent contacts among others. Of particular interest is the potential to produce p-type layers from which p-n junction devices could be routinely produced. While it is fairly routine for MOCVD to produce n-type films with doping concentrations in the 10E20 cm-3 range and resistivities below 10E-3 ohm-cm; it is very difficult to produce measurable p-type ZnO. We report on our efforts with doping films p-type using N gas sources and metalorganic sources of P, As, and Sb. Films showing acceptor bands by photoluminescence have been demonstrated; however reliable electrical measurements remain difficult. Specific problems include achieving low resistance ohmic contacts, accounting for the photo-responsiveness of ZnO films and sensitivity limits in Hall measurements of low-doped and compensated materials. The presentation will review deposition parameters, produced and processed films and material characteristics.

Keywords

chemical vapor deposition (CVD) (deposition)transparent conductorelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K07-48
Copyright
Copyright © Materials Research Society 2007

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