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Comparative Study of Hydrogen Diffusion in Hot-Wire and Glow-Discharge-Deposited a-Si:H

Published online by Cambridge University Press:  15 February 2011

J. Shinar ,
R. Shinar ,
K. E. Junge ,
E. Iwaniczko ,
A. H. Mahan ,
R. S. Crandall  and
H. M. Branz
J. Shinar
Affiliation:
Ames Laboratory -USDOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011
R. Shinar
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011 Microanalytical Instrumentation Center, Iowa State University, Ames, IA 50011
K. E. Junge
Affiliation:
Ames Laboratory -USDOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011
E. Iwaniczko
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
A. H. Mahan
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
R. S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
H. M. Branz
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

Long-range atomic H motion in hot-wire deposited (HW) a-Si:H is compared directly to that in glow-discharge deposited (GD) a-Si:H by monitoring the deuterium secondary ion mass spectrometry (DSLMS) profiles in [GD a-Si:H]/[GD a-Si:(H,D)]/[HW a-Si:H] multilayers vs annealing temperature and time. While the profiles in the GD layer are in excellent agreement with complementary error-function behavior and previous studies, the profiles in the HW layer suggest that the multiple-trapping motion of the H and D atoms is much slower, possibly due to an interface layer of defects. However, an exponential “tail” of D atoms extends deep into the HW layer, probably due to a long diffusion length of mobile D atoms, consistent with the established release times of H and D from the GD layer and H loss typical during growth of HW films. The results are also discussed in terms of the H exchange model and compared to previous NMIR studies of HW a-Si:H, which suggest that most of the hydrogen in the HW layer is concentrated in H-rich clusters dispersed in a network of very low H content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 299
Copyright
Copyright © Materials Research Society 1999

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