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A Comparative Study Of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN /Sapphire Substrates

Published online by Cambridge University Press:  03 September 2012

Anand V. Sampath ,
Mira Misra ,
Kshitij Seth ,
Yuri. Fedyunin ,
Hock M. Ng ,
Eleftherios Iliopoulos ,
Zeev Feit  and
Theodore.D. Moustakas
Anand V. Sampath
Affiliation:
ECE Department, Boston University, 8. St. Mary's St. Boston, MA 02215
Mira Misra
Affiliation:
ECE Department, Boston University, 8. St. Mary's St. Boston, MA 02215
Kshitij Seth
Affiliation:
ECE Department, Boston University, 8. St. Mary's St. Boston, MA 02215
Yuri. Fedyunin
Affiliation:
ECE Department, Boston University, 8. St. Mary's St. Boston, MA 02215
Hock M. Ng
Affiliation:
ECE Department, Boston University, 8. St. Mary's St. Boston, MA 02215
Eleftherios Iliopoulos
Affiliation:
ECE Department, Boston University, 8. St. Mary's St. Boston, MA 02215
Zeev Feit
Affiliation:
Photonics Center, Boston University, 8. St. Mary's St. Boston, MA 02215
Theodore.D. Moustakas
Affiliation:
ECE Department, Boston University, 8. St. Mary's St. Boston, MA 02215
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Abstract

In this paper we report on the fabrication and characterization of GaN diodes (Schottky and p-n junctions) grown by plasma assisted MBE. We observed that Schottky diodes improve both in reverse as well as forward bias when deposited on 5 μm thick HVPE n+-GaN/sapphire instead of bare sapphire substrates. These improvements are attributed to the reduction of disloctions in the MBE homoepitaxially grown GaN. Similar benefits are observed in the reverse bias of the p-n junctions which according to EBIC measurements are attributed to the reduction of etch pits in the MBE grown p-GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.1
Copyright
Copyright © Materials Research Society 1999

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