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Comparative SEM and Cathodoluminescence Microanalysis of Porous GaP Structures

Published online by Cambridge University Press:  17 March 2011

M.A. Stevens-Kalceff ,
S. Langa ,
I.M. Tiginyanu ,
J. Carstensen ,
M. Christophersen  and
H. Föll
M.A. Stevens-Kalceff
Affiliation:
Department of Applied Physics, University of Technology, Sydney, Australia
S. Langa
Affiliation:
Laboratory of Low-Dimensional Semiconductor Structures, Technical University of Moldova, Chisinau, Moldova
I.M. Tiginyanu
Affiliation:
Laboratory of Low-Dimensional Semiconductor Structures, Technical University of Moldova, Chisinau, Moldova
J. Carstensen
Affiliation:
Materials Science Department, Christian-Albrechts University, Kiel, Germany
M. Christophersen
Affiliation:
Materials Science Department, Christian-Albrechts University, Kiel, Germany
H. Föll
Affiliation:
Materials Science Department, Christian-Albrechts University, Kiel, Germany
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Abstract

Electron microscopy and cathodoluminescence (CL) microanalysis were used for a comparative study of porous layers fabricated by electrochemical etching of n-GaP substrates in a sulfuric acid solution. Both the CL and morphology of porous layers were found to depend upon the anodic current density. At high current density (100 mA/cm2) anodization leads to the formation of so-called current-line oriented pores and an increase in the CL intensity. We observed self-induced voltage oscillations giving rise to a synchronous modulation of the diameter of pores and CL intensity. When the current density decreased to values as low as 1 mA/cm2 the pores began to grow along <111> crystallographic directions and the CL intensity was observed to be lower than that of bulk GaP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.31.1
Copyright
Copyright © Materials Research Society 2001

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