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Comparative Analysis of MBE-grown GaN Films on SiC, ZnO and LiGaO2 Substrates

Published online by Cambridge University Press:  01 February 2011

F. Yun ,
M. A. Reshchikov ,
L. He ,
T. King ,
D. Huang ,
H. Morkoç ,
Jeff Nause ,
Gene Cantwell ,
H. Paul Maruska  and
C. W. Litton
F. Yun
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
M. A. Reshchikov
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
L. He
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
T. King
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
D. Huang
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
H. Morkoç
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA23284
Jeff Nause
Affiliation:
Cermet, Inc., Atlanta GA 30318
Gene Cantwell
Affiliation:
Eagle Picher Technologies, LLC., Maimi, OK 74354
H. Paul Maruska
Affiliation:
CPI Crystal Photonics, Inc., Sanford, FL 32773
C. W. Litton
Affiliation:
Air Force Research Laboratory (AFRL/MLPS), Wright Patterson AFB, OH 45433
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Abstract

We report the growth of GaN films by RF-MBE on SiC, ZnO, and LiGaO2 substrates, without buffer layers. Structural and optical properties of the films were probed by AFM for surface morphology, XRD for crystalline structure, and PL for optical properties. The dependence of GaN layer quality on the substrates and their surface pre-treatment prior to growth was studied within a similar MBE growth parameter matrix for all samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F8.21
Copyright
Copyright © Materials Research Society 2002

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