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Combined Tripod Polishing and Fib Method for Preparing Semiconductor Plan View Specimens

Published online by Cambridge University Press:  10 February 2011

Ron Anderson  and
Stanley J. Klepeis
Ron Anderson
Affiliation:
IBM Analytical Services, 1580 Route 52, Mail Stop E40, Hopewell Junction, NY 12533
Stanley J. Klepeis
Affiliation:
IBM Analytical Services, 1580 Route 52, Mail Stop E40, Hopewell Junction, NY 12533
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Abstract

Combining substantial pre-thinning of semiconductor device specimens via tripod polishing, followed by multiple, selective material removal steps with a focussed ion beam (FIB) tool, offers some unique possibilities with regard to preparing plan-view specimens at precise locations in the material below, and in the interconnect layers above, the semiconductor surface. Extension of these methods to other types of specimens in different configurations allows for the fabrication of multiple specimens on the same TEM grid that may not be possible by any other means.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 480: Symposium Z – Specimen Preparation for Transmission Electron Microscopy…IV , 1997 , 187
Copyright
Copyright © Materials Research Society 1997

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References

[1] See other paper by these authors this volume. Same reference numberGoogle Scholar
[2] Kirk, E. J., et al., Microscopy of Semiconducting Materials 1989, Proceedings of the Physics Conference held at Oxford University, 10–13 April 1989, ed. by Cullis, A. G. and Hutchison, J. L., Institute of Physics Conference Series Number 100, Bristol and New York, 1989.Google Scholar
[3] Hauffe, W., Proceedings EUREM, Budapest, 1984.Google Scholar
[4] R., Anderson, et al., Proceeding MAS 1995 Annual Meeting, Ed. Etz, E., VCRGoogle Scholar