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A Combined Tem/Rheed, Sem/Cl Study Of Epitaxial Gan

Published online by Cambridge University Press:  10 February 2011

P. D. Brown ,
D. M. Tricker ,
Y. Xin ,
T. S. Chengt ,
C. T. Foxont ,
D. Evanst ,
S. A. Galloway ,
J. Brock  and
C. J. Humphreys
P. D. Brown
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
D. M. Tricker
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
Y. Xin
Affiliation:
now at ORNL, Solid State Division, Oak Ridge, TN 37831-6031, USA
T. S. Chengt
Affiliation:
Department of Physics, Nottingham University, University Park, Nottingham, NG7 2RD, UK
C. T. Foxont
Affiliation:
Department of Physics, Nottingham University, University Park, Nottingham, NG7 2RD, UK
D. Evanst
Affiliation:
DTC, Maidenhead, UK
S. A. Galloway
Affiliation:
Oxford Instruments, Old Station Way, Eynsham, Witney, Oxon, OX8 1TL, UK
J. Brock
Affiliation:
now at ORNL, Solid State Division, Oak Ridge, TN 37831-6031, USA
C. J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
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Abstract

Epitaxial GaN grown by MBE has been characterised using the combined techniques of scanning electron microscopy / cathodoluminescence, reflection high energy electron diffraction (RHEED), and conventional transmission electron microscopy. Variations in spatial and spectral distributions of luminescence can arise due to embedded cubic inclusions within the hexagonal GaN matrix. The strong effect of doping on the crystallinity of the GaN deposit is illustrated, as determined by RHEED in a TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 399
Copyright
Copyright © Materials Research Society 1998

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