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Co-implantation : A simple way to grow doped Si nanocrystals embedded in SiO2

Published online by Cambridge University Press:  20 July 2012

Daniel Mathiot ,
Rim Khelifi ,
Dominique Muller  and
Sébastien Duguay
Daniel Mathiot
Affiliation:
Institut d’Électronique du Solide et des Systèmes (InESS, Université de Strasbourg and CNRS), 23 rue du Loess, B.P. 20, 67037 Strasbourg cedex 2, France.
Rim Khelifi
Affiliation:
Institut d’Électronique du Solide et des Systèmes (InESS, Université de Strasbourg and CNRS), 23 rue du Loess, B.P. 20, 67037 Strasbourg cedex 2, France.
Dominique Muller
Affiliation:
Institut d’Électronique du Solide et des Systèmes (InESS, Université de Strasbourg and CNRS), 23 rue du Loess, B.P. 20, 67037 Strasbourg cedex 2, France.
Sébastien Duguay
Affiliation:
GPM, Université et INSA de Rouen, UMR CNRS 6634, BP 12, Avenue de l’université, 76801 Saint Etienne du Rouvray, France.
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Abstract

Co-implantation, with overlapping implantation projected ranges, of Si and of the doping species (P, As, or B), followed by a single thermal anneal step, is proved to be a viable route to form doped Si-nc’s embedded in SiO2, with diameters of a few nanometers. Extensive results of the evolution of the Si-nc’s related photoluminescence, as a function of the dopant implanted dose, are presented and discussed. Atomic Probe Tomography (APT) is used to image directly the spatial distribution of the various species at the atomic scale. The 3D APT data demonstrate that n-type dopant atoms (P and As) are efficiently introduced in the "bulk" of the Sinanocrystals, whereas B atoms are preferentially located at their periphery, at the Si/SiO2 interface.

Keywords

ion-beam processingSiluminescence
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1455: Symposium II – Nanoscale Materials Modification by Photon, Ion, and Electron Beams , 2012 , mrss12-1455-ii08-21
Copyright
Copyright © Materials Research Society 2012

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References

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