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Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy

Published online by Cambridge University Press:  10 February 2011

P. Perlin ,
T. Suski ,
A. Polian ,
J. C. Chervin ,
W. Knap ,
J. Camassel ,
I. Grzegory ,
S. Porowski  and
J. W. Erickson
P. Perlin
Affiliation:
Center for High Technology Materials, University of New Mexico, EECE Building, Albuquerque, NM 87131–6081 USA On live from High Pressure Research Center, “Unipress” Warsaw, Poland
T. Suski
Affiliation:
High Pressure Research Center “Unipress”, Sokolowska 29/37, 01–142 Warszawa, Poland
A. Polian
Affiliation:
Physique Des Milieux Condenses, Universitè Pierre et Marie Curie, France, Place Jussieu, F-75251 Paris, France
J. C. Chervin
Affiliation:
Physique Des Milieux Condenses, Universitè Pierre et Marie Curie, France, Place Jussieu, F-75251 Paris, France
W. Knap
Affiliation:
Groupe d’Etudes des Semiconducteurs, Universitè Montpellier 2 CNRS, place Eugene Bataillon F-34095 Montepellier, France.
J. Camassel
Affiliation:
Groupe d’Etudes des Semiconducteurs, Universitè Montpellier 2 CNRS, place Eugene Bataillon F-34095 Montepellier, France.
I. Grzegory
Affiliation:
High Pressure Research Center “Unipress”, Sokolowska 29/37, 01–142 Warszawa, Poland
S. Porowski
Affiliation:
High Pressure Research Center “Unipress”, Sokolowska 29/37, 01–142 Warszawa, Poland
J. W. Erickson
Affiliation:
Charls Evans and Associates, Redwood City, CA.
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Abstract

Character of the metal-insulator transition which occurs at about 23 GPa in bulk GaN crystals has been studied by means of high pressure Raman spectroscopy. The related freeze-out of electrons is caused by the localized donor state formed by most likely oxygen and emerging at high pressures to the band gap of GaN. As a result, the electron concentration drops from its initial value of 5.1019 cm-3 to about 3. 1018 cm-3. These remaining electrons originate likely from another donor center with effective mass character, probably carbon. The obtained results raise a question whether the nitrogen vacancy is abundant enough to be observed in bulk GaN crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 689
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Nakamura, S., J. Cryst. Growth 145, 911 (1994)Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74, (1996).Google Scholar
3. Maruska, H.P. and Tietjen, J.J., Appl. Phys. Lett. 15, 327 (1992)Google Scholar
4. Ilegems, M. and Montgomery, M. C., J. Phys. Chem. Solids, 34, 885 (1969)Google Scholar
5. Monemar, B., Lagerstedt, O., J. Appl. Phys. 50, 6480, (1979)Google Scholar
6. Tansley, T.L., Egan, R.J., Phys.Rev. B. 45, 10942, (1992)Google Scholar
7. Jenkins, D. W., Dow, J., Tsai, M., J. Appl. Phys. 72, 4131, (1992)Google Scholar
8. Suski, T., Materials Science Forum, 143–147, 975 (1994)Google Scholar
9. Boguslawski, P., Briggs, E., Bernholc, J., Phys. Rev. B. 51, 17255, (1995)Google Scholar
10 Neugebauer, J. and Van de Walle, C.G., in Proc. 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, 1994 (World Scientific Publishing Co. Pte. Ltd., Singapore) p.2327 Google Scholar
11. Perlin, P.,Suski, T., Teisseyre, H., Leszczynski, M., Grzegory, I., Jun, J., Porowski, S., Boguslawski, P., Bernholc, J., Chervin, J.C., Polian, A., Moustakas, T.D., Phys. Rev. Lett. 75, 296 (1995); C. Wetzel, W. Walukiewicz, E.E. Haller, J. W. Ager III, I. Grzegory, S. Porowski and T.Suski, Phys. Rev. B 53, 1322 (19960Google Scholar
12 Perlin, P., Jauberthie-Cariilon, C., Jean Paul Itie, , San Miguel, A., Grzegory, I., Polian, A., Phys. Rev. B 45, 83, (1992)Google Scholar
13. Christensen, N.E., Gorczyca, I., Phys. Rev. B, 50, 4397 (1994)Google Scholar
14 Perlin, P., Camassel, J., Knap, W., Taliercio, T., Chervin, J. C., Suski, T., Grzegory, I., Porowski, S., Appl. Phys. Lett. 67, 2524, (1995)Google Scholar
15. Le Toullec, R., Pinceaux, J. P., Loubeyre, P., High Pressure Res. 1, 77 (1988)Google Scholar
16. Mao, H.K., Bell, P.M., Shaner, J.W., Steinberg, D. J., J. Appl. Phys. 49, 3276 (1978)Google Scholar
17. Mattila, T., Nieminen, R.M., Phys. Rev. B in printGoogle Scholar
18. Neugebauer, J., private communication.Google Scholar
19 Wetzel, C. et al. unpublished.Google Scholar
20. Boguslawski, P., Briggs, E.L., Bernholc, J., Appl. Phys. Lett. 69, 233 (1996)Google Scholar