No CrossRef data available.
Article contents
Classical and Rapid Thermal Process Effects on Oxygen and Carbon Precipitation in Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
We report observations on the effects of rapid thermal annealing on oxygen and carbon content of different single and multicrystalline silicon materials.
From the comparison between the resulting effects of conventional and short thermal annealing, we can deduce that the increase of the concentration of interstitial oxygen after a rapid thermal annealing (RTA) is due to the dissociation of some microprecipitates in silicon, which is significantly affected by the initial oxygen content, thermal history, defects and impurity content such as carbon.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1995