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Classical and Rapid Thermal Process Effects on Oxygen and Carbon Precipitation in Silicon

Published online by Cambridge University Press:  26 February 2011

K. Mahfoud ,
M. Loghmarti ,
J. C. Muller  and
P. Siffert
K. Mahfoud
Affiliation:
Lab.PHASE (UPR du CNRS n°292), BP20, F-67037 Strasbourg Cedex2, FRANCE
M. Loghmarti
Affiliation:
Lab.PHASE (UPR du CNRS n°292), BP20, F-67037 Strasbourg Cedex2, FRANCE
J. C. Muller
Affiliation:
Lab.PHASE (UPR du CNRS n°292), BP20, F-67037 Strasbourg Cedex2, FRANCE
P. Siffert
Affiliation:
Lab.PHASE (UPR du CNRS n°292), BP20, F-67037 Strasbourg Cedex2, FRANCE
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Abstract

We report observations on the effects of rapid thermal annealing on oxygen and carbon content of different single and multicrystalline silicon materials.

From the comparison between the resulting effects of conventional and short thermal annealing, we can deduce that the increase of the concentration of interstitial oxygen after a rapid thermal annealing (RTA) is due to the dissociation of some microprecipitates in silicon, which is significantly affected by the initial oxygen content, thermal history, defects and impurity content such as carbon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 971
Copyright
Copyright © Materials Research Society 1995

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