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Cl2-Based Dry Etching Of The AIGaInN System In Inductively Coupled Plasmas

Published online by Cambridge University Press:  10 February 2011

Hyun Cho ,
C. B. Vartuli ,
C. R. Abernathy ,
S. M. Donovan ,
S. J. Pearton ,
R. J. Shul  and
J. Han
Hyun Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
C. B. Vartuli
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
S. M. Donovan
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Cl2-based Inductively Coupled Plamas with low additional dc self-biases(−100V) produce convenient etch rates(500–1500Å.min−1) for GaN, AIN, InN, InAiN and InGaN. A systematic study of the effects of additive gas(Ar, N2, H2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent C12 in the discharge for all three mixtures, and to have an increase(decrease) in etch rate with source power(pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 327
Copyright
Copyright © Materials Research Society 1998

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References

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