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Chlorine-Based Plasma Etching of GaN

Published online by Cambridge University Press:  10 February 2011

R. J. Shul ,
R. D. Briggs ,
S. J. Pearton ,
C. B. Vartuli ,
C. R. Abernathy ,
J. W. Lee ,
C. Constantine  and
C. Barratt
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
R. D. Briggs
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
S. J. Pearton
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. B. Vartuli
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
J. W. Lee
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. Constantine
Affiliation:
Plasma-Therm, Inc., St. Petersburg, FL 33716
C. Barratt
Affiliation:
Plasma-Therm, Inc., St. Petersburg, FL 33716
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Abstract

The wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 μm/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved etch quality of the group-III nitrides over more conventional reactive ion etch (RIE) systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 969
Copyright
Copyright © Materials Research Society 1997

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