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Chimney-Shaped and Plateau-Shaped Gate Electrode Field Emission Arrays

Published online by Cambridge University Press:  10 February 2011

F. G. Tarntair ,
C. C. Wang ,
W. K. Hong ,
H. K. Huang  and
H. C. Cheng
F. G. Tarntair
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
C. C. Wang
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
W. K. Hong
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
H. K. Huang
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
H. C. Cheng
Affiliation:
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
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Abstract

A triode structure of chimney-shaped field emitter arrays is proposed in this article. This triode structure includes the chimney-shaped emitter, thermal oxidation dioxide, and the plateau-shaped singlecrystalline silicon gate electrode. For the application of the matrix-addressable and large area flat panel display, the uniform structure of the emitters and the yield become critical manufacturing issues when attempting to control nano-meter size features. The uniformity and yield of the chimney-shaped emitters are very well controlled. The nano-sized gate-to-emitter separations can be created by the changing thickness of the insulator. The uniformity of the insulator and emitter material can be controlled within 3% which can be obtained by most large area thin film deposition tools, not by photolithography.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 15
Copyright
Copyright © Materials Research Society 1998

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