Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T17:57:21.364Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical-Mechanical Polishing of Polymer Films: Comparison of Benzocyclobutene(BCB) and Parylene-N Films by XPS and AFM

Published online by Cambridge University Press:  15 February 2011

G.-R. Yang ,
Y.-P. Zhao ,
Jan M. Neirynck ,
Shyam P. Murarka  and
Ronald J. Gutmann
G.-R. Yang
Affiliation:
Department of Physics, Applied Physics, and Astronomy, Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
Y.-P. Zhao
Affiliation:
Department of Physics, Applied Physics, and Astronomy, Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
Jan M. Neirynck
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
Shyam P. Murarka
Affiliation:
Department of Materials Science and Engineering, Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
Ronald J. Gutmann
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
Get access

Abstract

The quality of benzocyclobutene (BCB) and Parylene-N (PA-N) films after chemical-mechanical polishing (CMP) is influenced by 3 factors: slurry composition, quality of the as-deposited film or post-deposition treated film, and polishing time. The quality of the films has been investigated by using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). It is shown that the higher the quality of the as-deposited film (or post-deposition treated film), the higher the quality of the polished film. The polishing time has little effect on the surface characteristics of high quality PA-N films, however it has an effect on BCB film. This is attributed to the structure and thermal-stability and higher chemical resistance of PA-N. The RMS surface roughness measured by AFM, for as-deposited PA-N is 90Å. The roughness after CMP processes is greater than 200Å. The roughness for as-spin-coated and polished BCB film is 5A, and 20Å, respectively. The morphology of the PA-N film, either as-deposited or polished, is not as good as the BCB film. A slurry which is good for BCB polishing is not good for PA-N polishing, and vice versa. These results indicate that the nature of the polymer film, including its chemical structure as well as the quality of the as-deposited/post-deposition treated film, plays an important role in polymer CMP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 161
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. For a review, see Steigerwald, Joseph M., Murarka, Shyam P., and Gutmann, Ronald J., Chemical Mechanical Planarization of Microelectronic Materials (John Wiley & Sons Inc., 1997).Google Scholar
2. Murarka, Shyam P., Solid State Tech. p. 83, March(1996);Google Scholar
Jairath, R., Pant, A., Mallon, T., Withers, B., and Krusell, W., Solid State Tech. 39, 107 (1996).Google Scholar
3. Awaga, N., Arita, Y., Inokawa, H., and Kobayashi, T., NTT R&D. 45, 373 (1995).Google Scholar
4. Steinbruchei, C., Appl. Surf. Sci. 91, 139 (1995).Google Scholar
5. Steigerwald, T.M., Murarka, S.P., Gutmann, R.J., and Duqutte, D.J., Materials Chemistry & Physics 41, 217 (1995).Google Scholar
6. Chiwen, Liu, Bantong, Dai, and Chingfa, Yeh, Thin Solid films 270, 607 (1995).Google Scholar
7. Wang, J.-F., Sethuraman, A.R., Cook, L.M., Kistler, R.C., and Schwartz, G.P., Semiconductor International 18, 120(1995).Google Scholar
8. Fury, M.A., Scherber, D.L., and Stell, M.A., MRS Bulletin 20, 61 (1996).Google Scholar
9. Neirynck, Jan M., Murarka, S.P., and Gutmann, R.J., MRS Symp. Proc. Vol.381, 229 (1996).Google Scholar
10. Neirynck, Jan M., Yang, G.-R., Murarka, Shyam P., and Gutmann, Ronald J., Thin Solid films 290, 447 (1996).Google Scholar
11. Yang, G.-R., Zhao, Y.-P., Neirynck, Jan M., Murarka, Shyam P., and Gutmann, Ronald J., submitted to J. Elect. Mat.Google Scholar
12. Ting, Chiu H. and Seidel, Thomas E., MRS Symp. Proc. Vol. 381, 3 (1996)Google Scholar