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Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers

Published online by Cambridge University Press:  25 February 2011

U. Emmerichs ,
C. Meyer ,
K. Leo ,
H. Kurz ,
C. H. Bjorkman ,
C. E. Shearon Jr ,
Y. Ma ,
T. Yasuda  and
G. Lucovsky
U. Emmerichs
Affiliation:
Institute of Semiconductor Electronics II, Rheinisch-Westfälische Technische Hochschule, 5100 Aachen, Germany
C. Meyer
Affiliation:
Institute of Semiconductor Electronics II, Rheinisch-Westfälische Technische Hochschule, 5100 Aachen, Germany
K. Leo
Affiliation:
Institute of Semiconductor Electronics II, Rheinisch-Westfälische Technische Hochschule, 5100 Aachen, Germany
H. Kurz
Affiliation:
Institute of Semiconductor Electronics II, Rheinisch-Westfälische Technische Hochschule, 5100 Aachen, Germany
C. H. Bjorkman
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202, USA
C. E. Shearon Jr
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202, USA
Y. Ma
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202, USA
T. Yasuda
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202, USA
G. Lucovsky
Affiliation:
Departments of Physics, and Material Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202, USA
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Abstract

Using surface second harmonic generation (SSHG) at 1053nm, we study the influence of off-axis orientation and surface structure of silicon (111) surfaces. We study wafers cut at angles between 0° and 5° in the [112] direction. The surface structure is varied by thermal oxidation at 850°C, annealing, and thinning the oxide in a HF solution. For comparison, nitride films are also investigated. The characteristic rotational symmetry of the SSHG-signal for (111) flat (non-vicinal) surfaces is enhanced by a Si/SiO2 interface. The oxide layer also influences the signals due to the steps on vicinal surfaces. The results are discussed in comparison with a microscopic model of the oxidized misoriented surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 815
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Bloembergen, N., Chang, R., Jha, S., and Lee, C., Physical Review 174, 813 (1968).Google Scholar
2. Wang, C., Phys. Rev., 1457 (1969).Google Scholar
3. Tom, H., Heinz, T., and Shen, Y., Phys. Rev. Letters, 1983 (1983).Google Scholar
4. van Hasselt, C., Verheijen, M., and Rasing, T., Phys. Rev. B 42, 9263 (1990).Google Scholar
5. Kulyuk, L., Shutnov, D., Strumban, E., and Aktsipetrov, O., J. Opt. Soc. Am. B 8, 1766 (1991).Google Scholar
6. Hollering, R. and Barmentlo, M., Optics Comm. 88, 141 (1992).Google Scholar
7. Verheijen, M., van Hasselt, C., and Rasing, T., Surf. Sci. 251/252, 467 (1991).Google Scholar
8. Heinz, T., Ph. D. dissertation, University of California, Berkeley (1982).Google Scholar
9. Lucovsky, G., Tsu, D., Parsos, G., and Kim, S., in Proc. of the SPIE, volume 1037, page 52, 1988.Google Scholar
10. Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Appl. Phys. Lett. 60, 434 (1992).Google Scholar