Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T09:05:25.939Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemically Assisted Ion Beam Etching of SiGe

Published online by Cambridge University Press:  25 February 2011

O.J. Glembocki ,
S.M. Prokes  and
R.E. Stahlbush
O.J. Glembocki
Affiliation:
U.S. Naval Research Laboratory, Washington, DC 20375
S.M. Prokes
Affiliation:
U.S. Naval Research Laboratory, Washington, DC 20375
R.E. Stahlbush
Affiliation:
U.S. Naval Research Laboratory, Washington, DC 20375
Get access

Abstract

Chemically assisted ion beam etching (CAIBE) of Si1−Gex films is reported. Ar+ ion sputtering in the presence of Cl2 background gas has been used to etch epitaxial films of Si1−xGex, with x ranging between 0 and 0.5. It is found that Si1−xGex, sputters more rapidly than Si, but less than Ge. The use of C12 gas enhances the sputter rates of SiGe as in the case of Si. Analysis of the etch rates indicates that the etch rate increase is due to an enhancement of the sputtering process, rather than a chemical effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 369
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Coburn, J.W. and Winters, Harold F., J. Appl. Phys. 50, 3189(1979).Google Scholar
2. Chinn, J.D., Adesida, I. and Wolf, E.D., J. Vac. Sci. Technol., B1, 1028(1983).Google Scholar
3. Mayer, T.M. and Barker, R.A., J. Vac. Sci. Technol., 21, 757(1982).Google Scholar
4. Dieleman, J., Sanders, F.H.M., Kolfschoten, A.W., Zalm, P.C., Vries, A.E. de and Haring, A., J. Vac. Sci. Technol. B3, 1384(1984).Google Scholar
5. Rossen, Rebbeca and Sawin, Herbert H., Appl. Phys. Lett. 45, 860(1984).Google Scholar
6. Mayer, T.M., Barker, R.A. and Whitman, L.J., J. Vac. Sci. Technol., 18, 349(1981).Google Scholar
7. Sigmund, Peter, Phys. Rev. 184, 383(1969).Google Scholar
8. Ziegler, J.F., Biersack, J.P. and Littmark, U., The Stopping and Range of Ions in Solids, (Pergamon Press, Inc. New York, 1985).Google Scholar
9. Chinn, J.D., Phillips, W., Adesida, I. and Wolf, E.D., J. Electrochem. Soc., 131, 375(1984).Google Scholar
10. Chuang, M. and Coburn, J.W., J. Vac. Sci. Technol. A8, 1969(1990).Google Scholar
11. Handbook of Physics and Chemistry 57th ed., D-188, (CRC Press Inc., Ohio, 1976-1977).Google Scholar