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Chemical Vapor Deposition of Silicon Insulating Films Induced with a Perpendicular Electron Beam

Published online by Cambridge University Press:  21 February 2011

H. Zarnani
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
J. J. Rocca
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
D. Bishop
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
N. W. Cody
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
G. J. Collins
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
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Abstract

SiO2 and Si3N4 thin films have been deposited at a substrate temperature of 350° using a glow discharge electron beam irradiating perpendicular to the wafer surface. Deposition rates up to 1000 Å/min and 250 Å/min respectively have been obtained. Films deposited over 4 inch diameter silicon wafers show uniformity of 5 percent. The deposition conditions and film properties are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

1. Thompson, L. R., Rocca, J. J., Emery, K. A., Boyer, P. K. and Collins, G. J., Appl. Phys. Lett. 777, 48, 1983.Google Scholar
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3. Rocca, J. J., Meyer, J. O., Farrell, M. R., and Collins, G. J., J. Appl. Phys. 56, 3, 1984.CrossRefGoogle Scholar
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