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Chemical Vapor Deposition of Conformal Alumina Thin Films

Published online by Cambridge University Press:  10 February 2011

Bradley D. Fahlman  and
Andrew R. Barron
Bradley D. Fahlman
Affiliation:
Department of Chemistry, Rice University, Houston, Texas 77005
Andrew R. Barron*
Affiliation:
Department of Chemistry, Rice University, Houston, Texas 77005 Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas 77005
*
To whom correspondence should be addressed (http://python.rice.edu/-arb/Barron.html)
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Abstract

Deposition of highly conformal alumina thin films has been carried out by hydrolysis of the liquid alane precursor, AlH3(NMe2Et). Deposition onto Si wafers, quartz and carbon fibers were all carried out utilizing a hot-wall atmospheric pressure chemical vapor deposition (APCVD) system, while deposition onto ceramic particles was accomplished in a simple fluidized-bed APCVD reactor. Films were characterized by SEM, microprobe and electrical conductivity measurements. Growth rates were on the order of 40 - 80 Å.min−1 at 165 °C. The conformality of the films was illustrated using silicon wafers that were etched prior to deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 75
Copyright
Copyright © Materials Research Society 2000

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