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Chemical Reactions at the in Vacuo Au/Inp Interface

Published online by Cambridge University Press:  25 February 2011

R. Stanley Williams ,
C. Thomas Tsai  and
Eun-Hee Cirlin
R. Stanley Williams
Affiliation:
Dept.of Chemistry γ Biochemistry and Solid State Science CenterUniversity of California, Los angeles, CA 90024
C. Thomas Tsai
Affiliation:
Dept.of Chemistry γ Biochemistry and Solid State Science CenterUniversity of California, Los angeles, CA 90024
Eun-Hee Cirlin
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd. Malibu, CA 90265
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Abstract

The reaction between a Au film and an Inp substrate occurs much more readily in vacuo than under an external pressure of an inert ga. At atmospheric pressure, the compounds Au2P3 and the γ intermetallic compound (at times designated Au7In3, Au9In4, or Au2In) are formed at 450 °C and remain fairly stable even when annealed at 500°C for hours. Under ultra-high vacuum conditions, phosphorous readily escapes from the film when a sample is annealed at 300°C for 15 minutes, and the major reaction products are the ψ phase (Au3In2) and another intermetallic compound that is probably AuIn. The presence of an inert gas creates a kinetic barrier for the escape of phosphorous from the surface, and thus Au/InP behaves more like a closed thermodynamic system under pressure than in a vacuum.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 83: Symposium J – Physical and Chemical Properties of Thin Metal Overlayers and Alloy Surfaces , 1986 , 243
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Williams, R.H., Varma, R.R., and McKinley, A., J. Phys. C: Solid State Phys. 10, 4545 (1977).CrossRefGoogle Scholar
2 Hiraki, A., Shuto, K., Kim, S., Kammsara, W., and Iwami, M., Appl.Phys. Letts. 31, 611 (1977).Google Scholar
3. Chye, P.W., Lindau, I., Pianetta, P., Garner, C.M., Su, C.Y. and Spicer, W.E., Phys.Rev. B 18, 5545 (1978).Google Scholar
4. Brillson, L.J., Brucker, C.F., Katnani, A.D., Stoffel, N.G., and Margaritondo, G., J.Vac Sci.Technol. 19, 661 (1981).Google Scholar
5. Vandenberg, J. M., Temkin, H., Hamm, R. A., and DiGiuseppe, M. A., J. Appl. Phys. 53, 7385 (1982); Thin Solid Films 104, 419 (1983).Google Scholar
6. Mojzes, I., Szigethy, D., and Veresegyhazy, R., Electr. Letts. 19, 117 (1983).CrossRefGoogle Scholar
7. Petro, W.G., Kendelewicz, T., Babalola, I.A., Lindau, I., and Spicer, W.E., J.Vac.Sci.Technol. A 2, 835 (1984).Google Scholar
8. Kim, H.B., Lovas, A.F., Sweeny, G.G and Heng, T.M.S., Inst.Phys. Conf., Ser. No. 33b, 145 (1977).Google Scholar
9. Tuck, B., Ip, K.T., and Eastman, L.F., Thin Solid Films 55, 41 (1978).Google Scholar
10. Szydlo, N. and Olivier, J., J.Appl.Phys. 50, 1445 (1979).Google Scholar
11. Keramidas, V.G., Temkin, H. and Hahajan, S., Inst. Phys Conf., Ser. No. 56, 293 (1980).Google Scholar
12. Piotrowska, A., Auvray, P., Guivarch, A., Pelous, G., and Henoc, P., J.Appl.Phys. 52, 5112 (1981).Google Scholar
13. Camlibel, I., Chin, A.K., Ermanis, F., DiGiuseppe, M.A., Lourenco, J.A. and Bonner, W.A., J.Electrochem.Soc.: Solid-State Sci. & Technol. 129, 2586 (1982).Google Scholar
14. Brasen, D., Karlicek, R.F. and Donnelly, V.M., J. Electrochem. Soc.: Electrochem Sci. and Technol. 130, 1473 (1983).Google Scholar
15. Tsai, C.T. and Williams, R.S., Mats, J., Res. 1, xxx (1986).Google Scholar
16. Pugh, J.H. and Williams, R.S., J.Mats Res. 1, 343 (1986).Google Scholar