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Chemical Nano-tomography of Self-assembled Ge-Si:Si(001) Islands from Quantitative High Resolution Transmission Electron Microscopy
Published online by Cambridge University Press: 31 January 2011
Abstract
The knowledge of composition and strain with high spatial resolution is highly important for the understanding of the chemical and electronic properties of alloyed nanostructures. Several applications require a precise knowledge of both composition and strain, which can only be extracted by self-consistent methodologies. Here, we demonstrate the use of a quantitative high resolution transmission electron microscopy (QHRTEM) technique to obtain two-dimensional (2D) projected chemical maps of epitaxially grown Ge-Si:Si(001) islands, with high spatial resolution, at different crystallographic orientations. By a combination of these data with an iterative simulation, it was possible infer the three-dimensional (3D) chemical arrangement on the strained Ge-Si:Si(001) islands, showing a four-fold chemical distribution which follows the nanocrystal shape/symmetry. This methodology can be applied for a large variety of strained crystalline systems, such as nanowires, epitaxial islands, quantum dots and wells, and partially relaxed heterostructures.
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- Copyright © Materials Research Society 2009