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Chemical Effects in Ion Implantation Induced Quantum Well Intermixing

Published online by Cambridge University Press:  17 March 2011

Todd W. Simpson ,
Paul G. Piva  and
Ian V. Mitchell
Todd W. Simpson
Affiliation:
University of Western Ontario, Department of Physics & Astronomy, London, ON, N6A 3K7, CANADA
Paul G. Piva
Affiliation:
University of Western Ontario, Department of Physics & Astronomy, London, ON, N6A 3K7, CANADA
Ian V. Mitchell
Affiliation:
University of Western Ontario, Department of Physics & Astronomy, London, ON, N6A 3K7, CANADA
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Abstract

Ion implantation followed by rapid thermal annealing is used to induce layer intermixing and thus selectively blue-shift the emission wavelength of InP-based quantum well hetero- structures. The intermixing is greatly enhanced over thermal intermixing due to the supersaturation of defects. The magnitude of the observed blue-shift has been studied previously as a function of ion fluence and ion mass: the dependence on ion mass is well established, with heavier ions producing a larger shift. We show here that chemical effects can also play a significant role in determining the induced blue-shift. Data are presented from the implantation of the similar mass ions; aluminum (m~27), silicon (m~28) and phosphorus (m~31). The P- induced blue shift displays a monotonic increase with fluence, consistent with previous studies; however, the fluence dependence of Al- and Si-induced blue-shifts both deviate significantly from the behaviour for P. These results have important implications for attempts to scale intermixing behaviour with ion mass.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.16
Copyright
Copyright © Materials Research Society 2001

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References

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