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Chemical Beam Epitaxy Of Ganxpi- Using A N Radical Beam Source

Published online by Cambridge University Press:  15 February 2011

N. Y. Li ,
D. H. Tomich ,
W. S. Wong ,
J. S. Solomon  and
C. W. Tu
N. Y. Li
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92093, [email protected]
D. H. Tomich
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92093, [email protected]
W. S. Wong
Affiliation:
MSME Department, University of California, Berkeley, CA 94720
J. S. Solomon
Affiliation:
Research Institute, University of Dayton, Dayton, OH 45469
C. W. Tu
Affiliation:
ECE Department, University of California, San Diego, La Jolla, CA 92093, [email protected]
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Abstract

In this study we report the growth behavior of GaNxP1−x by chemical beam epitaxy using triethylgallium, tertiarybutylphosphine, and a RF-plasma N radical beam source. We demonstrate that the N radical beam source is an effective N source for the growth of GaNxP1−x, compared to ammonia (NH3) with co-injection of phosphine (PH3) or tertiarybutylphosphine (TBP). At a growth temperature of 640°C, the N composition increases slowly from 2.5 to 2.8% even though the N2 flow rate is doubled. When the N2 flow rate is increased further, the reflection high-energy electron diffraction pattern (RHEED) becomes spotty. The N composition, however, shows a strong dependence on the growth temperature. For a fixed N plasma radical beam flux, the lower the substrate temperature is, the higher the N incorporation. The N composition can be adjusted from 0.7 to 10.2% by lowering the growth temperature from 690 to 400°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 317
Copyright
Copyright © Materials Research Society 1996

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