Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T17:40:17.314Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical and Mechanical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems

Published online by Cambridge University Press:  28 February 2011

Jerzy Kanicki  and
Nancy Voke
Jerzy Kanicki
Affiliation:
IBM Thomas J.Watson Research Center P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
Nancy Voke
Affiliation:
IBM Thomas J.Watson Research Center P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
Get access

Extract

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Indeed, some valuable relationships between physico-chemical and mechanical properties have been established.Special attention has been devoted to the influence of hydrogen on these properties.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 167
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kappor, J. and Stein, H.J., Proc.Symp.on Silicon Nitride Thin Insulating Films, eds.Kapoor, V.J. and Stein, H.J. (The Electrochemical Society, Pennington, 1983).Google Scholar
2. Lanford, W.A., Trautvetter, H.P., Ziegler, J.F. and Keller, J., Appl.Phys.Lett., 28, 566 (1976).Google Scholar
3. Lanford, W.A. and Rand, M.J., J.Appl.Phys., 49, 2473 (1978).CrossRefGoogle Scholar
4. Saunders, P.A. and Zigler, J.F., Nuc.Inst.Meth.Phys.Res., 218, 67 (1983).Google Scholar
5. van Nie, A.G., Solide Technology, p.81 (January 1980).Google Scholar
6. Glang, G., Holmwood, R.A., Rosenfeld, R.L., Rev.Sci.Inst., 36, 7 (1965).Google Scholar
7. Ghate, P.G., Hall, L.H., J.Electrochem.Soc., 119, 491 (1972).Google Scholar
8. Chow, R., Lanford, W.A., Ke-Ming, W. and Rosier, R.S., J.Appl.Phys., 53, 630 (1982).Google Scholar
9. Retajczyk, T.F. Jr., and Sinha, A.K., Thin Solid Films, 70, 241 (1980).Google Scholar