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Chemical and Electrical Mechanisms in Titanium, Platinum, and Hafnium Contacts to Alpha (6H) Silicon Carbide

Published online by Cambridge University Press:  22 February 2011

L. M. Porter ,
R. C. Glass ,
R. F. Davis ,
J. S. Bow ,
M. J. Kim  and
R. W. Carpenter
L. M. Porter
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907.
R. C. Glass
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden.
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907.
J. S. Bow
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704.
M. J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704.
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704.
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Abstract

Thin films (2 Å - 1000 Å) of titanium, platinum, and hafnium were deposited via UHV electron beam evaporation at room temperature on n-type, (0001) alpha (6H)-SiC and compared in terms of interfacial chemistry, energy barriers to electrical conduction, and macroscopic electrical behavior. Current-voltage measurements have shown that these contacts are rectifying, all with ideality factors between 1.01 and 1.09. The lowest leakage currents (∼5 × 10−8 A/cm2 at -10 V) were determined for unannealed Pt contacts and for Hf contacts annealed at 700°C for 20 minutes. Current-voltage (I-V), capacitance-voltage (C-V), and x-ray photoelectron spectro-scopy (XPS) were among the techniques used to determine barrier heights, all of which were within a few tenths of an electron volt of 1.0 eV. The narrow range of calculated barrier heights along with the XPS valence spectrum of the chemically prepared SiC surface give evidence that the Fermi level is pinned at the semiconductor surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 471
Copyright
Copyright © Materials Research Society 1993

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References

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