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Charging effect of a nc-Si in a SiO2 layer observed by scanning probe microscopy

Published online by Cambridge University Press:  01 February 2011

J. M. Son ,
J. M. Kim ,
Y. Khang ,
E. H. Lee ,
S. I. Park ,
Y. S. Kim  and
C. J. Kang
J. M. Son
Affiliation:
Department of Physics, Myongji University, Yongin, Gyeonggi-do 449-728, Korea
J. M. Kim
Affiliation:
Department of Physics, Myongji University, Yongin, Gyeonggi-do 449-728, Korea
Y. Khang
Affiliation:
Devices Lab, Samsung Advanced Institute of Technology, Yongin, Gyeonggi-do 449-712, Korea
E. H. Lee
Affiliation:
Devices Lab, Samsung Advanced Institute of Technology, Yongin, Gyeonggi-do 449-712, Korea
S. I. Park
Affiliation:
PSIA corp. Induspia 5F, Sang-Daewon-Dong 517-13, Sungnam, Gyeonggi-do 462-120, Korea
Y. S. Kim
Affiliation:
Department of Physics, Myongji University, Yongin, Gyeonggi-do 449-728, Korea
C. J. Kang
Affiliation:
Department of Physics, Myongji University, Yongin, Gyeonggi-do 449-728, Korea email: [email protected]
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Abstract

Scanning probe microscopy (SPM) with a conducting tip has been used to electrically probe silicon nanocrystals (NCs) on an insulating substrate. NC samples were produced by aerosol techniques followed by a sharpening oxidation. The size of NCs is in the range of 10-50nm and deposited on a silicon substrate with a density of around 1011/cm2. Using a conducting tip, the charge was injected directly into the NCs, and the bias dependent images due to the trapped charges in the NCs were monitored. Charging effects affected by the size of NCs and injection direction were also estimated from the apparent height differences of the NCs with respect to the applied bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A8.7
Copyright
Copyright © Materials Research Society 2005

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References

[1] Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F., and Chan, K., Appl. Phys. Lett. 68, 1377 (1996)10.1063/1.116085Google Scholar
[2] Guo, L., Leobandung, E., and Chou, S. Y., Science 275, 649 (1997)10.1126/science.275.5300.649Google Scholar
[3] Ye, Q., Tsu, R., and Nicollian, E. H., Phys. Rev. B 44, 1806 (1991)10.1103/PhysRevB.44.1806Google Scholar
[4] Choi, S.-H. and Elliman, R. G., Appl. Phys. Lett. 75, 968 (1999)10.1063/1.124569Google Scholar
[5] Tiwari, S., Rana, F., Chan, K., Shi, L., and Hanafi, H., Appl. Phys. Lett. 69, 1232 (1996)10.1063/1.117421Google Scholar
[6] Burgi, L., Sirringhaus, H., and Friend, R. H., Appl. Phys. Lett. 80, 2913 (2002)10.1063/1.1470702Google Scholar
[7] Hassenkam, T., Greve, D. R., and Bjørnholm, T., Adv. Mater. 13, 631 (2001)10.1002/1521-4095(200105)13:9<631::AID-ADMA631>3.0.CO;2-F3.0.CO;2-F>Google Scholar
[8] Melin, T., Diesinger, H., Deresmes, D., and Stievenard, D., Phys. Rev. B 69, 035321 (2004)10.1103/PhysRevB.69.035321Google Scholar
[9] Mé lin, T., Deresmes, D., and Stiévenard, D., Appl. Phys. Lett. 81, 5054 (2002)10.1063/1.1532110Google Scholar
[10] Mang, K. M., Kuk, Y., Kwon, J., Kim, Y. S., Jeon, D., and Kang, C. J., Europhys. Lett. 67, 261 (2004)10.1209/epl/i2003-10288-6Google Scholar
[11] Williams, C. C., Slinkman, J., Hough, W. P., and Wickramasinghe, H. K., Appl. Phys. Lett. 55, 1662 (1989)10.1063/1.102312Google Scholar
[12] Barret, R. C. and Quate, C. F., J. Appl. Phys. 70, 2725 (1991)10.1063/1.349388Google Scholar
[13] Huang, Y., Williams, C. C., and Smith, H., J. Vac. Sci. Technol. B 14, 433 (1996)10.1116/1.588489Google Scholar
[14] Kopanski, J. J., Marchiando, J. F., and Lowney, J. R., J. Vac. Sci. Technol. B 14, 242 (1996)10.1116/1.588455Google Scholar
[15] Neubauer, G., Erickson, A., Williams, C. C., Kopanski, J. J., Rodgers, M., and Adderton, D., J. Vac. Sci. Technol. B 14, 426 (1996)10.1116/1.588487Google Scholar
[16] Kang, C. J., Buh, G. H., Lee, S., Kim, C. K., Mang, K. M., Im, C., and Kuk, Y., Appl. Phys. Lett. 74, 1815 (1999)10.1063/1.123095Google Scholar
[17] Buh, G. H., Chung, H. J., Yi, J. H., I. T.Yoon, and Kuk, Y., J. Appl. Phys. 90, 443 (2001)10.1063/1.1375803Google Scholar
[18] Edwards, H., McGlothin, R., Martin, R. S., Elisa, U, Gribelyuk, M., Mahaffy, R., Shih, C. K., List, R. S. and Ukraintsev, V. A., Appl. Phys. Lett. 72, 698 (1998)10.1063/1.120849Google Scholar
[19] Hong, J. W., Shin, S. M., Kang, C. J., Kuk, Y., and Khim, Z. G., Appl. Phys. Lett. 75, 1760 (1999)10.1063/1.124811Google Scholar