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Charge-Defect Thermodynamic Equilibrium and Metastable Defects in Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

C.M. Fortmann  and
J. D. Cohen
C.M. Fortmann
Affiliation:
IEC, University of Delaware, Newark, DE 19716 USA
J. D. Cohen
Affiliation:
University of Oregon, Eugene, OR 97403 USA
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Abstract

The thermodynamic equilibrium framework first presented at the Spring ′91 MRS meeting is refined and applied. The effect of temperature on band gap is added, resulting in a larger estimate of the loss in entropy associated with dangling bond formation. The magnitude of the entropy loss is consistent with a structural rearrangement. At the temperatures of interest, dangling bond defect formation is exothermic with negative entropy and free energy changes. The thermodynamic framework was used to address some practical issues including the estimation of the saturated dangling bond density resulting from low temperature light soaking and the electronic energy levels of the various dangling bond charge states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 383
Copyright
Copyright © Materials Research Society 1992

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References

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