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Charged Defect State Distributions Obtained from the Analysis of Photoconductivities in Intrinsic a-Si:H Films

Published online by Cambridge University Press:  16 February 2011

Mehmet Güneş ,
R. W. Collins  and
C. R. Wronski
Mehmet Güneş
Affiliation:
Electronic Materials Processing and Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
R. W. Collins
Affiliation:
Electronic Materials Processing and Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
C. R. Wronski
Affiliation:
Electronic Materials Processing and Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
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Abstract

Steady-state photoconductivity, sub-bandgap absorption and electron spin resonance (ESR) Measurements were carried out on annealed and light soaked intrinsic hydrogenated Amorphous silicon (a-Si:H) films. The experimental results were modeled using detailed numerical Model. The defect densities derived from the sub-bandgap absorption in the light soaked films were correlated with the ESR spin densities. Selfconsistent fitting of the data was obtained using a gap state distribution which consists of positively charged defect states above, negatively charged defect states below and neutral defect states at about Midgap. Both the annealed and the light degraded states are modeled using the same distribution of gap states whose densities increase upon light soaking with a slight increase in the ratio of the neutral to charged defect densities. These results on intrinsic a-Si:H are consistent with those of charged defect Models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 413
Copyright
Copyright © Materials Research Society 1994

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