Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-19T05:54:21.100Z Has data issue: false hasContentIssue false
  • English
  • Français

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

Published online by Cambridge University Press:  15 February 2011

Hyeon-Seag Kim ,
D. L. Polla  and
S. A. Campbell
Hyeon-Seag Kim
Affiliation:
Department of Electrical Engineering, University of Minnesota Minneapolis, Minnesota 55455, [email protected]
D. L. Polla
Affiliation:
Department of Electrical Engineering, University of Minnesota Minneapolis, Minnesota 55455, [email protected]
S. A. Campbell
Affiliation:
Department of Electrical Engineering, University of Minnesota Minneapolis, Minnesota 55455, [email protected]
Get access

Abstract

The electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 161
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tamagawa, T., Polla, D. L., and Hseuch, C.-C., IEEE International Electron Device Meeting, San Francisco, Dec. pp. 617 (1990)Google Scholar
2. Polla, D. L., in Science and Technology of Electroceramic Thin Films, edited by Auciello, O. and Waser, R. pp. 413 (1995)Google Scholar
3. Lin, C.T., Scanlan, B.W., McNeill, J.D., Webb, J.S., Li, L., Lipeles, R.A., Adams, P.M., and Leung, M.S., J. Mater. Res, 7 pp. 2546 (1992); J.S. Wright and L.F. Francis, MRS symposium proceedings, San Francisco, CA, April (1996)Google Scholar
4. Desu, Seshu B., and In Yoo, K., Integrated Ferroelectrics, 1993, Vol.3, pp. 365 (1993)Google Scholar
5. Al-Shareef, H. N., Auciello, O., and Kingon, A. I., in Science and Technology of Electroceramic Thin Films, edited by Auciello, O. and Waser, R. pp. 133 (1995)Google Scholar
6. Mihara, T., and Watanabe, H., Part I, and II, Jpn. J. Appl. Phys. Vol.34, No. 10, pp.5664, and pp. 5674, (1995)Google Scholar
7. Moazzami, R., Hu, C., and Shepherd, W. H., IEEE Trans. on Electron Devices, Vol.39, No. 9, pp. 2044 (1992)Google Scholar