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Charge Transport in Nanoglasses of Phase-Change Memory

Published online by Cambridge University Press:  01 February 2011

Mark Alexander Simon ,
Marco Nardone ,
sergey Kostylev ,
Ilya V. Karpov  and
Victor G. Karpov
Mark Alexander Simon
Affiliation:
[email protected], University of Toledo, Physics & Astronomy, Toledo, Ohio, United States
Marco Nardone
Affiliation:
[email protected], University of Toledo, Physics & Astronomy, 2801 W. Bancroft St., Toledo, Ohio, 43606, United States
sergey Kostylev
Affiliation:
[email protected], University of Toledo, Physics & Astronomy, 2801 W. Bancroft St., Toledo, Ohio, 43606, United States
Ilya V. Karpov
Affiliation:
[email protected], Intel, Santa Clara, California, United States
Victor G. Karpov
Affiliation:
[email protected], University of Toledo, Physics & Astronomy, Toledo, Ohio, United States
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Abstract

We discuss possible mechanisms for Poole-Frenkel type of non-ohmic conduction in chalcogenide glasses in the range of room temperatures. Overall, we list 8 such mechanisms, only one of which (Schottky emission) can be ruled out as inconsistent with the observations. Seven others can give more or less satisfactory fits of the observed non-linear IV curves. Our analysis calls upon indicative facts that would enable one to discriminate between the various alternative models.

Keywords

memoryelectrical propertiesdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1251: Symposium H – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2010 , 1251-H01-11
Copyright
Copyright © Materials Research Society 2010

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References

1 Mott, N. F. and Davis, E. A. Electronic Processes in Non-crystalline Materials (Clarendon Press, Oxford, 1979).Google Scholar
2 Frenkel, J. Phys. Rev. 54, 657 (1938).Google Scholar
3 Poole, H. H. Lond. Edinb. Dubl. Phil. Mag. 33, 112 (1916); Ibid., 34, 195 (1917).Google Scholar
4 Gotoh, T. Non-Cryst, J.. Solids 353, 2728 (2008).Google Scholar
5 El-Samanoudy, M.M., Appl. Surface Science 207, 219 (2003).Google Scholar
6 Bogoslowsky, N. A. and Tsendin, K. D. Semiconductors 43, 1338 (2009).Google Scholar
7 Voronkov, E. N. and Kozyukhin, S. A. Semiconductors 43, 921 (2009).Google Scholar
8 Allsopp, D. and Thompson, M. J. J. Phys. D: Appl. Phys. 9, 2075 (1976).Google Scholar
9 Kodgespirova, I.F., Shkut, V.A. and Kostylev, S.A., Proc. Int. Conference “Amorphous semiconductors -'82” ,in Russian, , Grigorovichi, R. ed., p. 247–249, Bucharest, (1982).Google Scholar
10 Abakumov, V. N. Perel, V. I. Yassievich, I. N. Nonradiative recombination in semiconductors, North Holland (1991).Google Scholar
11 Sze, S. M. Physics of Semiconductor Devices (Willey & Sons, New York, 1981).Google Scholar
12 Lebedev, E. A. and Rogachev, N. A. Sov. Phys. Semiconductors 15, 86 (1981)Google Scholar
13 Shklovskii, B. I. and Efros, A. L. Electronic properties of doped semiconductors, Springer-Verlag (1992).Google Scholar
14 Lifshits, I. M. Gredeskul, S. A. and Pastur, L. A.. Introduction to the Theory of Disordered Systems. John Wiley & Sons, New York, (1988).Google Scholar
15 Lampert, M. A. and Mark, P. Current Injection in Solids, Academic Press, New York, 1970.Google Scholar
16 Anderson, P. W. Phys. Rev. Lett. 34, 953 (1975)Google Scholar
17 Phillips, W. A. Phil. Mag. 34, 983 (1976).Google Scholar
18 Ielmini, D. and Zhang, Y. Appl. Phys. Lett. 90, 192102 (2007).Google Scholar
19 Ielmini, D. and Zhang, Y. J. Appl. Phys. 102, 054517 (2007).Google Scholar
20 Fugazza, D. Ielmini, D. Lavizzari, S. and Lacaita, A. L. IEDM Tech. Dig., 723 (2009).Google Scholar
21 Owen, A. E. and Robertson, J. M. IEEE Trans. Electron. Dev. 20, 105 (1973).Google Scholar
22 Bagley, B. Solid State Commun., 8, 345 (1970).Google Scholar
23 Galperin, Yu. M. Karpov, V. G. and Kozub, V. I. Adv. Phys. 38, 669 (1989)Google Scholar
24 Baranovskii, S. D. and Karpov, V. G. Fiz. Tekh. Poluprovodn. (S.-Peterburg, 21, 3, (1987); Sov. Phys. Semicond. 21, 1, (1987).Google Scholar
25 Pollak, M. and Hauser, J. J. Phys. Rev. Lett. 31, 21 (1973).Google Scholar
26 Raikh, M. E. and Ruzin, I. M. in Mesoscopic Phenomena in Solids, edited by Altshuller, B. L. Lee, P. A. and Webb, R. A. (Elsevier, 1991), p. 315.Google Scholar
27 Nardone, M. Karpov, V. G. Shvydka, D. and Attygalle, M. L. C. J. Appl. Phys. 106, 074503 (2009)Google Scholar
28 Shklovskii, B. I. Sov. Phys.-Semicond. 13, 53 (1979).Google Scholar
29 Shih, Y..H. Lee, M.H. Breitwisch, M. et al. , IEDM Tech. Dig., 753 (2009).Google Scholar
30 Song, Ki-Bong,_ Lee, Sang-Su, Kim, Kyung-Am et al. , Appl. Phys. Lett., 90, 263510 (2007)Google Scholar
31 Nardone, M. Simon, M. and Karpov, V. G. Appl. Phys. Lett. 96, 163501 (2010).Google Scholar