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Charge State Defect Engineering of Silicon During Ion Implantation

Published online by Cambridge University Press:  15 February 2011

R. A. Brown ,
J. Ravi ,
Y. Erokhin ,
G. A. Rozgonyi  and
C. W. White
R. A. Brown
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
J. Ravi
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Y. Erokhin
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
G. A. Rozgonyi
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, TN 37831
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Abstract

The effects of in situ interventions which alter defect interactions during implantation, and thereby affect the final damage state, have been investigated. Specifically, we examined the effects of internal electric fields and charge carrier injection on damage accumulation in silicon. In the first part of this work, we implanted H or He ions into diode structures which were either reverse or forward biased during implantation. In the second part, we implanted B or Si ions into plain silicon wafers whilst illuminating them with UV light. In each case, the overall effect is one of damage reduction. Both the electric field and charge carrier injection effects may be understood as resulting from changes in defect interactions caused in part by changes to the charge state of defects formed during implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 131
Copyright
Copyright © Materials Research Society 1997

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References

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