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Charge Retention in Single Silicon Nanocrystal Layers

Published online by Cambridge University Press:  11 February 2011

Rishikesh Krishnan ,
Todd D. Krauss  and
Philippe M. Fauchet
Rishikesh Krishnan
Affiliation:
Dept. of Electrical & Computer Eng, University of Rochester, Rochester, NY14627, USA
Todd D. Krauss
Affiliation:
Dept. of Chemistry, University of Rochester, Rochester, NY 14627, USA
Philippe M. Fauchet
Affiliation:
Dept. of Electrical & Computer Eng, University of Rochester, Rochester, NY14627, USA
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Abstract

Silicon (Si) nanocrystals formed by controlled thermal crystallization of amorphous silicon dioxide (a-SiO2)/amorphous silicon (a-Si)/amorphous silicon dioxide (a-SiO2) layers hold considerable promise for application in non-volatile memory products and optoelectronic devices. The size of the nanocrystals is fixed by the thickness of the Si layer and strong quantum confinement is provided in the vertical (growth) direction by the insulating a-SiO2 layers. However, the extent of quantum confinement in the lateral dimensions remains to be established. Electron energy loss spectroscopy (EELS) measurements performed within a scanning transmission electron microscope (STEM) indicate that the nanocrystals are laterally isolated by approximately 2nm of a-SiO2. The confinement potential provided by this barrier is insufficient to localize carriers within a nanocrystal for prolonged durations and can permit quantum mechanical tunneling via wave function overlap between adjacent nanocrystals. Charge leakage kinetics within a sheet of Si nanocrystals was studied using electric force microscopy. Approximately 750 electrons were injected within a 100nm radius circular patch with an atomic force microscope cantilever. The entire charge dissipated from this area in 70min via lateral conduction routes. With a goal of localizing the injected charge and enhancing its retention time, the samples were subjected to relatively low temperature dry oxidation at 750°C. After 20 min of oxidation, retention times above 400 minutes were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F1.3
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

For reviews, see Yoffe, A.D., Adv. Phys. 42, 173 (1993);Google Scholar
Alivisatos, A.P., J. Phys. Chem 100, 13226 (1996).Google Scholar
Hirschman, K.D., Tsybeskov, L., Duttagupta, S.P., and Fauchet, P.M., Nature 384, 338–341 (1996).Google Scholar
3. Gruning, U., Lehmann, V., Ottow, S., and Busch, K., Appl. Phys. Lett. 68, 747 (1996).Google Scholar
4. Tiwari, S., Rana, F., Chan, K., Hanafi, H., Chan, W., and Buchanan, D., IEDM 95–521, 20.4.1 Google Scholar
5. Guo, L., Leobandung, E., and Chou, S.Y.; Science 275, 649 (1997).Google Scholar
6. Pavesi, L., Negro, L.D., Mazzoleni, C., Franzo, G., Priolo, F., Nature 408, 440 (2000).Google Scholar
7. Tsybeskov, L., Hirschman, K.D., Duttagupta, S.P., Zacharias, M., Fauchet, P.M., McCaffery, J.P., and Lockwood, D.J., Appl. Phys. Lett 72, 43 (1998).Google Scholar
8. Grom, G.F., Lockwood, D.J., McCaffery, J.P., Labbe, H.J., Fauchet, P.M., White, B. Jr, Diener, J., Kovalev, D., Koch, F., and Tsybeskov, L., Nature 407, 358 (2000).Google Scholar
9. Nonvolatile Semiconductor Memory Technology, Eds. Brown, W.D., and Brewer, J.E., IEEE Press (1998).Google Scholar
10. Introduction to Scanning Transmission Electron Microscopy; Eds. Keyes, R.J., Garratt-Reed, A.J., Goodhew, P.J., and Lorimer, G.W., Bios Scientific Publishers (1998).Google Scholar
11. Kirkland, E.J., and Thomas, M.G., Ultramicroscopy 62, 79–88 (1996).Google Scholar
12. Batson, P.E., Inst. Phys. Conf. Ser. No 117, Section 2, page 55 (1991).Google Scholar
13. Krauss, T.D., and Brus, L.E., Phys. Rev. Lett 83, 4840 (1999).Google Scholar
14. Scheer, K.C., Madhukar, S., Muralidhar, R., Lozano, J., Meara, D.O., Bagchi, S., Conner, J., Perez, C., Sadd, M., Jones, R.E., White, B.E. Jr, Mat. Res. Soc. Symp. Proc. 638, F6.3.1. Google Scholar
15. Boer, E., Bell, L.D., Brongersma, M.L., Atwater, H.A., Flagan, R.C., Appl. Phys. Lett 78, 20, 2001.Google Scholar
16. Peng, C., Hirshman, K.D., and Fauchet, P.M., J. Appl. Phys 80, 295, (1996).Google Scholar