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Charge Collection Microscopy of Single Crystal and Polycrystalline GaAs

Published online by Cambridge University Press:  25 February 2011

O. Paz  and
J. M. Borrego
O. Paz
Affiliation:
IBM East Fishkill, General Technology Division, HIopewell Junction, NY 12533
J. M. Borrego
Affiliation:
Electrical & Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12181
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Abstract

This study demonstrates a new technique of measuring transport properties of minority carriers by varying the generation rate of the electron-beam induced carriers and measuring the amount of collected charge per incident electron. The technique is suitable. for measurements of very short diffusion length in bulk GaAs material and for measurements in polycrystalline, CVD grown GaAs layers containing grains that are smaller than the diffusion length.

The diffusion length in single crystal GaAs measured at several values of electron-beam energy was.32μm. For l-2μm polycrystalline grains it was found that the diffusion length in the bulk of the. grain can remain high (8μm) but high recombination levels (up to 2 × 106 cm sec−1) prevail at the grain boundaries.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 177
Copyright
Copyright © Materials Research Society 1986

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