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Charge Carrier Transport in a-Si:H/a-SiC:H Heterojunction with Blocking Layer

Published online by Cambridge University Press:  17 March 2011

Yu. Vygranenko ,
M. Fernandes ,
P. Louro ,
A. Mačarico  and
M. Vieira
Yu. Vygranenko
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal
M. Fernandes
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal
P. Louro
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal
A. Mačarico
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal
M. Vieira
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal
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Abstract

This paper presents a one-dimensional numerical simulation of the charge carrier transport and photogeneration within a p-i-n (a-Si:H) homojunction and a p(a-SiC:H)/i (a-Si:H)/n (a-SiC:H) heterojunction with weakly-doped n-layers. A good matching between the simulated J-V characteristics and the corresponding experimental curves has been achieved for both configurations. By analysing the simulated band diagrams, electric field

distributions, the electron and hole current densities, and the free carrier population profiles we conclude that in short-circuit mode the carrier transport is different in the homojunction and heterojunction due to band offsets.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.16.1
Copyright
Copyright © Materials Research Society 2001

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References

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