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Charge Carrier Recombination in Doped a-Si:H Studied by Contactless Photoconductivity Measurements

Published online by Cambridge University Press:  26 February 2011

A. Werner  and
M. Kunst
A. Werner
Affiliation:
Hahn-Meitner-Institut, Bereich Strahlenchemie, D-1000 Berlin 39, Federal Republic of Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institut, Bereich Strahlenchemie, D-1000 Berlin 39, Federal Republic of Germany
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Abstract

Transient photoconductivity measurements in a-Si:H at different n- and p-doping level point to decay kinetics which strongly depend on the doping level and excitation densities. In undoped a-Si:H excess charge carriers decay mainly by a transition between electrons and holes at their respective mobility edges. The generation of hole traps by n-doping quenches this decay channel and transitions between localized states in the bandgap play an important role in charge carrier kinetics. In p-doped material the availability of a large density of mobile holes and positively charged recombination centers increases the electron decay drastically.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 119
Copyright
Copyright © Materials Research Society 1987

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